TY - GEN
T1 - Application of silicon carbide diode in ultrasound high voltage pulse protection circuit
AU - Shiyuan, Zhou
AU - Kai, Zhang
AU - Dinguo, Xiao
AU - Chunguang, Xu
AU - Bo, Yang
PY - 2013
Y1 - 2013
N2 - SiC diode (Silicon Carbide Diode) is a newly commercial available Schottky barrier diode with zero reverse-recovery-time, which is a perfect candidate for fabricating high voltage pulse protection circuit in ultrasonic transceiver system. With SiC diode's high performance, the circuit can deliver 400 volts or higher voltage protection level, which is not an easy job for other kind of diodes. In this article, the theory of diode-bridge protection circuit is briefly discussed, and a SiC diode-bridge protection circuit was fabricated, and some experiments has been done to verify the feasibility of using SiC diodes in diode-bridge protection circuit.
AB - SiC diode (Silicon Carbide Diode) is a newly commercial available Schottky barrier diode with zero reverse-recovery-time, which is a perfect candidate for fabricating high voltage pulse protection circuit in ultrasonic transceiver system. With SiC diode's high performance, the circuit can deliver 400 volts or higher voltage protection level, which is not an easy job for other kind of diodes. In this article, the theory of diode-bridge protection circuit is briefly discussed, and a SiC diode-bridge protection circuit was fabricated, and some experiments has been done to verify the feasibility of using SiC diodes in diode-bridge protection circuit.
KW - High voltage pulse
KW - Protection circuit
KW - Silicon carbide diode
KW - Ultrasound
UR - http://www.scopus.com/inward/record.url?scp=84874640889&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/AMM.290.115
DO - 10.4028/www.scientific.net/AMM.290.115
M3 - Conference contribution
AN - SCOPUS:84874640889
SN - 9783037856338
T3 - Applied Mechanics and Materials
SP - 115
EP - 119
BT - Spacecraft Structures, Materials and Mechanical Testing
T2 - 2012 International Conference on Spacecraft Structures, Materials and Mechanical Testing, ICSSMMT 2012
Y2 - 27 December 2012 through 28 December 2012
ER -