@inproceedings{a51c6d8f36ec48e797e6539fd18e2f2f,
title = "An X-band reconfigurable bandpass filter using phase change RF switches",
abstract = "In this paper, we report on a reconfigurable bandpass filter for X-band applications. The filter is composed of coupled X/2 microstrip line resonators. Center frequency tuning of each resonator is achieved using an RF switch based on a phase change chalcogenide compound, germanium telluride, which switches in and out a loading capacitor. A combination of electric and magnetic coupling between the resonators realizes a near constant absolute-bandwidth as the filter is tuned. The center frequency of the filter is switched between 7.45 and 8.07 GHz, with a 3-dB bandwidth of ∼ 500 MHz, insertion loss of less than 3.2 dB, and return loss of better than 18 dB. The measured third-order intermodulation intercept point (IIP3) and 1-dB power compression point (P1dB) are better than 30 dBm at frequency offset of 1 kHz and 25 dBm, respectively. Measured and simulated results are in good agreement. To our best knowledge, this is the first time implementation of a tunable filter using germanium telluride based phase change switches.",
keywords = "Germanium telluride, MEMS, X band, phase change materials, switches, tunable filters",
author = "Muzhi Wang and Feng Lin and Mina Rais-Zadeh",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 16th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2016 ; Conference date: 24-01-2016 Through 27-01-2016",
year = "2016",
month = mar,
day = "31",
doi = "10.1109/SIRF.2016.7445462",
language = "English",
series = "SiRF 2016 - 2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "38--41",
booktitle = "SiRF 2016 - 2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems",
address = "United States",
}