TY - GEN
T1 - An Overview of the Impact of the Temperature on the Small- and Large-Signal Performance of 0.15-μm Microwave GaN HEMTs
AU - Crupi, Giovanni
AU - Vadalà, Valeria
AU - Bosi, Gianni
AU - Gugliandolo, Giovanni
AU - Bao, Xiue
AU - Giofrè, Rocco
AU - Raffo, Antonio
AU - Colantonio, Paolo
AU - Donato, Nicola
AU - Vannini, Giorgio
N1 - Publisher Copyright:
© 2024 IEEE.
PY - 2024
Y1 - 2024
N2 - The goal of the present work is to study the influence of the thermal effects on the small- and large-signal characteristics of gallium nitride (GaN) high-electron-mobility transistor (HEMT) devices by using an extensive campaign of measurements. The studied devices were manufactured using a 0.15-μm process on silicon carbide (SiC) substrate. Experiments carried out on the three HEMTs with different gate widths are investigated in detail to get a thorough comprehension of how changing the backside temperature up to 100°C affects the transistor performance.
AB - The goal of the present work is to study the influence of the thermal effects on the small- and large-signal characteristics of gallium nitride (GaN) high-electron-mobility transistor (HEMT) devices by using an extensive campaign of measurements. The studied devices were manufactured using a 0.15-μm process on silicon carbide (SiC) substrate. Experiments carried out on the three HEMTs with different gate widths are investigated in detail to get a thorough comprehension of how changing the backside temperature up to 100°C affects the transistor performance.
KW - backside temperature
KW - high-power applications
KW - large-signal operation
KW - scattering parameter measurements
KW - transistor
UR - http://www.scopus.com/inward/record.url?scp=85208941572&partnerID=8YFLogxK
U2 - 10.1109/IWS61525.2024.10713595
DO - 10.1109/IWS61525.2024.10713595
M3 - Conference contribution
AN - SCOPUS:85208941572
T3 - 2024 IEEE MTT-S International Wireless Symposium, IWS 2024 - Proceedings
BT - 2024 IEEE MTT-S International Wireless Symposium, IWS 2024 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 11th IEEE MTT-S International Wireless Symposium, IWS 2024
Y2 - 16 May 2024 through 19 May 2024
ER -