摘要
An on-chip bandpass filter (BPF) is designed and fabricated in a 0.13-μm SiGe (Bi)-CMOS technology. This BPF consists of a broadside-coupled meander-line resonator (BCMLR) in conjunction with a defected-ground structure (DGS). By simply grounding a BCMLR, the resonator can be converted into a BPF. Further applying a DGS to this BPF, an additional transmission zero can be generated in the high-frequency band. To understand the fundamentals of this design, an $LC$-equivalent circuit is given for investigation of the transmission zeros and poles. The measured results show that the BPF has a center frequency at 33 GHz with a bandwidth of 18%. The minimum insertion loss is 2.6 dB, while the maximum stopband attenuation is 44 dB. The chip size, excluding the pads, is only 0.038 mm2 ( 0.126×0.3 mm2).
源语言 | 英语 |
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文章编号 | 7891020 |
页(从-至) | 626-629 |
页数 | 4 |
期刊 | IEEE Electron Device Letters |
卷 | 38 |
期 | 5 |
DOI | |
出版状态 | 已出版 - 5月 2017 |
已对外发布 | 是 |