@inproceedings{3d3c718d3e204374b863e6971668a89b,
title = "An integrated fully-differential CMOS-MEMS z-axis accelerometer utilizing a torsional suspension",
abstract = "This paper presents an integrated fully-differential CMOS-MEMS z-axis accelerometer utilizing a torsional sensing element. The sidewall capacitors formed by multiple CMOS interconnect metal layers are exploited for fully differential displacement sensing with a common-centroid wiring configuration. A deep reactive ion etching (DRIE) based micro-fabrication process with large processing tolerance has been developed to allow robust sensor structures and high fabrication yield. With a monolithically integrated low-power, low-noise, dual-chopper amplifier which has a measured 44.5 dB gain and 1 mW power consumption, the fabricated integrated z-axis accelerometer demonstrates a sensitivity of 320 mV/g and an overall noise floor of 110 μg/√Hz.",
keywords = "Accelerometer, CMOS-MEMS, Torsional, Z-axis",
author = "Hongwei Qu and Deyou Fang and Huikai Xie",
year = "2008",
doi = "10.1109/NEMS.2008.4484502",
language = "English",
isbn = "9781424419081",
series = "3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS",
pages = "1063--1066",
booktitle = "3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008",
note = "3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008 ; Conference date: 06-01-2008 Through 09-01-2008",
}