An improved low-power low-noise dual-chopper amplifier for capacitive CMOS-MEMS accelerometers

Hongzhi Sun; Fares Maarouf; Deyou Fang; Kemiao Jia; Huikai Xie

doi:10.1109/NEMS.2008.4484505

An improved low-power low-noise dual-chopper amplifier for capacitive CMOS-MEMS accelerometers

Hongzhi Sun^*, Fares Maarouf, Deyou Fang, Kemiao Jia, Huikai Xie

^*此作品的通讯作者

University of Florida

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

10 引用（Scopus）

摘要

This paper reports an improved low-power low-noise dual-chopper amplifier (DCA) for capacitive CMOS-MEMS accelerometers. The new DCA employs an on-chip band-gap voltage reference to reduce the number of bonding pads and the complexity of the external circuits. The temperature drifting of the first-stage gain is reduced by using PMOS instead of NMOS as an active load. A prototype DCA with a three-axis accelerometer has been fabricated using the TSMC 0.35 μm technology. The number of required bonding pads is reduced from 21 to 14, and the temperature sensitivity is reduced from 1.2 × 10 ^-3/°C to m × 10^-4°C.

源语言	英语
主期刊名	3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008
页	1075-1080
页数	6
DOI	https://doi.org/10.1109/NEMS.2008.4484505
出版状态	已出版 - 2008
已对外发布	是
活动	3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008 - Sanya, 中国期限: 6 1月 2008 → 9 1月 2008

出版系列

姓名	3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS

会议

会议	3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008
国家/地区	中国
市	Sanya
时期	6/01/08 → 9/01/08

访问文件

10.1109/NEMS.2008.4484505

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引用此

Sun, H., Maarouf, F., Fang, D., Jia, K., & Xie, H. (2008). An improved low-power low-noise dual-chopper amplifier for capacitive CMOS-MEMS accelerometers. 在 3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008 (页码 1075-1080). 文章 4484505 (3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS). https://doi.org/10.1109/NEMS.2008.4484505

@inproceedings{c7a396611b514ddeb8bcf675f07769ff,

title = "An improved low-power low-noise dual-chopper amplifier for capacitive CMOS-MEMS accelerometers",

abstract = "This paper reports an improved low-power low-noise dual-chopper amplifier (DCA) for capacitive CMOS-MEMS accelerometers. The new DCA employs an on-chip band-gap voltage reference to reduce the number of bonding pads and the complexity of the external circuits. The temperature drifting of the first-stage gain is reduced by using PMOS instead of NMOS as an active load. A prototype DCA with a three-axis accelerometer has been fabricated using the TSMC 0.35 μm technology. The number of required bonding pads is reduced from 21 to 14, and the temperature sensitivity is reduced from 1.2 × 10 -3/°C to m × 10-4°C.",

keywords = "CMOS-MEMS accelerometer, Dual-chopper amplifier, Low noise, Low power, Three-axis accelerometer",

author = "Hongzhi Sun and Fares Maarouf and Deyou Fang and Kemiao Jia and Huikai Xie",

year = "2008",

doi = "10.1109/NEMS.2008.4484505",

language = "English",

isbn = "9781424419081",

series = "3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS",

pages = "1075--1080",

booktitle = "3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008",

note = "3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008 ; Conference date: 06-01-2008 Through 09-01-2008",

}

Sun, H, Maarouf, F, Fang, D, Jia, K & Xie, H 2008, An improved low-power low-noise dual-chopper amplifier for capacitive CMOS-MEMS accelerometers. 在 3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008., 4484505, 3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS, 页码 1075-1080, 3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008, Sanya, 中国, 6/01/08. https://doi.org/10.1109/NEMS.2008.4484505

An improved low-power low-noise dual-chopper amplifier for capacitive CMOS-MEMS accelerometers. / Sun, Hongzhi; Maarouf, Fares; Fang, Deyou 等.
3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008. 2008. 页码 1075-1080 4484505 (3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS).

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

TY - GEN

T1 - An improved low-power low-noise dual-chopper amplifier for capacitive CMOS-MEMS accelerometers

AU - Sun, Hongzhi

AU - Maarouf, Fares

AU - Fang, Deyou

AU - Jia, Kemiao

AU - Xie, Huikai

PY - 2008

Y1 - 2008

N2 - This paper reports an improved low-power low-noise dual-chopper amplifier (DCA) for capacitive CMOS-MEMS accelerometers. The new DCA employs an on-chip band-gap voltage reference to reduce the number of bonding pads and the complexity of the external circuits. The temperature drifting of the first-stage gain is reduced by using PMOS instead of NMOS as an active load. A prototype DCA with a three-axis accelerometer has been fabricated using the TSMC 0.35 μm technology. The number of required bonding pads is reduced from 21 to 14, and the temperature sensitivity is reduced from 1.2 × 10 -3/°C to m × 10-4°C.

AB - This paper reports an improved low-power low-noise dual-chopper amplifier (DCA) for capacitive CMOS-MEMS accelerometers. The new DCA employs an on-chip band-gap voltage reference to reduce the number of bonding pads and the complexity of the external circuits. The temperature drifting of the first-stage gain is reduced by using PMOS instead of NMOS as an active load. A prototype DCA with a three-axis accelerometer has been fabricated using the TSMC 0.35 μm technology. The number of required bonding pads is reduced from 21 to 14, and the temperature sensitivity is reduced from 1.2 × 10 -3/°C to m × 10-4°C.

KW - CMOS-MEMS accelerometer

KW - Dual-chopper amplifier

KW - Low noise

KW - Low power

KW - Three-axis accelerometer

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U2 - 10.1109/NEMS.2008.4484505

DO - 10.1109/NEMS.2008.4484505

M3 - Conference contribution

AN - SCOPUS:50249167790

SN - 9781424419081

T3 - 3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS

SP - 1075

EP - 1080

BT - 3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008

T2 - 3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008

Y2 - 6 January 2008 through 9 January 2008

ER -

Sun H, Maarouf F, Fang D, Jia K, Xie H. An improved low-power low-noise dual-chopper amplifier for capacitive CMOS-MEMS accelerometers. 在 3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008. 2008. 页码 1075-1080. 4484505. (3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS). doi: 10.1109/NEMS.2008.4484505

An improved low-power low-noise dual-chopper amplifier for capacitive CMOS-MEMS accelerometers

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