An accurate and stable finite element method for self-heating effects simulation of semiconductor devices

科研成果: 书/报告/会议事项章节会议稿件同行评审

摘要

In this paper, an accurate and stable control volume finite element method with Scharfetter-Gummel upwind effects (CVFEM-SG) has been employed to numerically simulate the self-heating effects of semiconductor devices. The thermodynamic drift-diffusion model is utilized to model the self-heating effects. The numerical experiments show that the proposed approach is accurate and robust while alleviates the requirement on the quality of the mesh compared with the traditional finite volume method.

源语言英语
主期刊名Proceedings of the 2019 21st International Conference on Electromagnetics in Advanced Applications, ICEAA 2019
出版商Institute of Electrical and Electronics Engineers Inc.
1107-1110
页数4
ISBN(电子版)9781728105635
DOI
出版状态已出版 - 9月 2019
活动21st International Conference on Electromagnetics in Advanced Applications, ICEAA 2019 - Granada, 西班牙
期限: 9 9月 201913 9月 2019

出版系列

姓名Proceedings of the 2019 21st International Conference on Electromagnetics in Advanced Applications, ICEAA 2019

会议

会议21st International Conference on Electromagnetics in Advanced Applications, ICEAA 2019
国家/地区西班牙
Granada
时期9/09/1913/09/19

指纹

探究 'An accurate and stable finite element method for self-heating effects simulation of semiconductor devices' 的科研主题。它们共同构成独一无二的指纹。

引用此