An accurate and stable finite element method for self-heating effects simulation of semiconductor devices

Da Miao Yu; Xiao Min Pan; Xin Qing Sheng

doi:10.1109/ICEAA.2019.8879296

An accurate and stable finite element method for self-heating effects simulation of semiconductor devices

Da Miao Yu, Xiao Min Pan, Xin Qing Sheng

Beijing Institute of Technology

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

摘要

In this paper, an accurate and stable control volume finite element method with Scharfetter-Gummel upwind effects (CVFEM-SG) has been employed to numerically simulate the self-heating effects of semiconductor devices. The thermodynamic drift-diffusion model is utilized to model the self-heating effects. The numerical experiments show that the proposed approach is accurate and robust while alleviates the requirement on the quality of the mesh compared with the traditional finite volume method.

源语言	英语
主期刊名	Proceedings of the 2019 21st International Conference on Electromagnetics in Advanced Applications, ICEAA 2019
出版商	Institute of Electrical and Electronics Engineers Inc.
页	1107-1110
页数	4
ISBN（电子版）	9781728105635
DOI	https://doi.org/10.1109/ICEAA.2019.8879296
出版状态	已出版 - 9月 2019
活动	21st International Conference on Electromagnetics in Advanced Applications, ICEAA 2019 - Granada, 西班牙期限: 9 9月 2019 → 13 9月 2019

出版系列

姓名	Proceedings of the 2019 21st International Conference on Electromagnetics in Advanced Applications, ICEAA 2019

会议

会议	21st International Conference on Electromagnetics in Advanced Applications, ICEAA 2019
国家/地区	西班牙
市	Granada
时期	9/09/19 → 13/09/19

访问文件

10.1109/ICEAA.2019.8879296

其它文件与链接

链接到 Scopus 的出版物

引用此

Yu, D. M., Pan, X. M., & Sheng, X. Q. (2019). An accurate and stable finite element method for self-heating effects simulation of semiconductor devices. 在 Proceedings of the 2019 21st International Conference on Electromagnetics in Advanced Applications, ICEAA 2019 (页码 1107-1110). 文章 8879296 (Proceedings of the 2019 21st International Conference on Electromagnetics in Advanced Applications, ICEAA 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICEAA.2019.8879296

Yu, Da Miao ; Pan, Xiao Min ; Sheng, Xin Qing. / An accurate and stable finite element method for self-heating effects simulation of semiconductor devices. Proceedings of the 2019 21st International Conference on Electromagnetics in Advanced Applications, ICEAA 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 页码 1107-1110 (Proceedings of the 2019 21st International Conference on Electromagnetics in Advanced Applications, ICEAA 2019).

@inproceedings{f377870c52864e808bccf11f7b6a5204,

title = "An accurate and stable finite element method for self-heating effects simulation of semiconductor devices",

abstract = "In this paper, an accurate and stable control volume finite element method with Scharfetter-Gummel upwind effects (CVFEM-SG) has been employed to numerically simulate the self-heating effects of semiconductor devices. The thermodynamic drift-diffusion model is utilized to model the self-heating effects. The numerical experiments show that the proposed approach is accurate and robust while alleviates the requirement on the quality of the mesh compared with the traditional finite volume method.",

keywords = "CVFEM-SG, Self-heating effect, Semiconductor devices",

author = "Yu, {Da Miao} and Pan, {Xiao Min} and Sheng, {Xin Qing}",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 21st International Conference on Electromagnetics in Advanced Applications, ICEAA 2019 ; Conference date: 09-09-2019 Through 13-09-2019",

year = "2019",

month = sep,

doi = "10.1109/ICEAA.2019.8879296",

language = "English",

series = "Proceedings of the 2019 21st International Conference on Electromagnetics in Advanced Applications, ICEAA 2019",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1107--1110",

booktitle = "Proceedings of the 2019 21st International Conference on Electromagnetics in Advanced Applications, ICEAA 2019",

address = "United States",

}

Yu, DM, Pan, XM & Sheng, XQ 2019, An accurate and stable finite element method for self-heating effects simulation of semiconductor devices. 在 Proceedings of the 2019 21st International Conference on Electromagnetics in Advanced Applications, ICEAA 2019., 8879296, Proceedings of the 2019 21st International Conference on Electromagnetics in Advanced Applications, ICEAA 2019, Institute of Electrical and Electronics Engineers Inc., 页码 1107-1110, 21st International Conference on Electromagnetics in Advanced Applications, ICEAA 2019, Granada, 西班牙, 9/09/19. https://doi.org/10.1109/ICEAA.2019.8879296

An accurate and stable finite element method for self-heating effects simulation of semiconductor devices. / Yu, Da Miao; Pan, Xiao Min; Sheng, Xin Qing.
Proceedings of the 2019 21st International Conference on Electromagnetics in Advanced Applications, ICEAA 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 页码 1107-1110 8879296 (Proceedings of the 2019 21st International Conference on Electromagnetics in Advanced Applications, ICEAA 2019).

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

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AU - Yu, Da Miao

AU - Pan, Xiao Min

AU - Sheng, Xin Qing

PY - 2019/9

Y1 - 2019/9

N2 - In this paper, an accurate and stable control volume finite element method with Scharfetter-Gummel upwind effects (CVFEM-SG) has been employed to numerically simulate the self-heating effects of semiconductor devices. The thermodynamic drift-diffusion model is utilized to model the self-heating effects. The numerical experiments show that the proposed approach is accurate and robust while alleviates the requirement on the quality of the mesh compared with the traditional finite volume method.

AB - In this paper, an accurate and stable control volume finite element method with Scharfetter-Gummel upwind effects (CVFEM-SG) has been employed to numerically simulate the self-heating effects of semiconductor devices. The thermodynamic drift-diffusion model is utilized to model the self-heating effects. The numerical experiments show that the proposed approach is accurate and robust while alleviates the requirement on the quality of the mesh compared with the traditional finite volume method.

KW - CVFEM-SG

KW - Self-heating effect

KW - Semiconductor devices

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U2 - 10.1109/ICEAA.2019.8879296

DO - 10.1109/ICEAA.2019.8879296

M3 - Conference contribution

AN - SCOPUS:85074905580

T3 - Proceedings of the 2019 21st International Conference on Electromagnetics in Advanced Applications, ICEAA 2019

SP - 1107

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BT - Proceedings of the 2019 21st International Conference on Electromagnetics in Advanced Applications, ICEAA 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 21st International Conference on Electromagnetics in Advanced Applications, ICEAA 2019

Y2 - 9 September 2019 through 13 September 2019

ER -

Yu DM, Pan XM, Sheng XQ. An accurate and stable finite element method for self-heating effects simulation of semiconductor devices. 在 Proceedings of the 2019 21st International Conference on Electromagnetics in Advanced Applications, ICEAA 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 页码 1107-1110. 8879296. (Proceedings of the 2019 21st International Conference on Electromagnetics in Advanced Applications, ICEAA 2019). doi: 10.1109/ICEAA.2019.8879296

An accurate and stable finite element method for self-heating effects simulation of semiconductor devices

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