Absorption Enhancement in a Quantum Dot Thz Detector with a Metal-Semiconductor-Metal Structure

The low absorptivity of quantum dot nano-structures cannot meet the requirements for high-performance next-generation Thz detectors which can be used for environmental pollution detection. In this study, a novel metal-semiconductor-metal (MSM) cavity structure with a square hole array instead of a traditional planar metal electrode was developed to improve and enhance the absorptivity of a quantum dot Thz detector. The possible modes and loss problems in the metal resonant cavity were analyzed using the finite-element transmission matrix, the eigenvector method, and Kirchhoff diffraction theory. The results demonstrate that the MSM cavity structure introduced in the detector can enhance absorption up to 8.666 times higher than that of the conventional counterpart.