TY - JOUR
T1 - Ab initio calculations of hydroxyl impurities in CaF 2
AU - Shi, H.
AU - Chang, L.
AU - Jia, R.
AU - Eglitis, R. I.
PY - 2012/3/15
Y1 - 2012/3/15
N2 - OH - in CaF 2 crystal and the (111) surface have been studied by using density functional theory (DFT) with hybrid exchange potentials, namely, DFT-B3PW. Three bulk and 20 surface OH - configurations were investigated, and we found that Configs OH (111) for the bulk case and HO11(\) and HOfull(\) for the surface case are the energetically most favorable configurations. For the (111) CaF 2 surface atomic layers, the surface hydroxyls lead to a remarkable XY-translation and a dilating effect in the Z-direction, overcoming the surface shrinking effect in the perfect slab. Bond population analysis shows that there is a considerable covalency between the oxygen and hydrogen atoms, and the surface effect strengthens the covalency of surface OH - impurities. The studies on band structures and density of states of the surface OH --impurity systems demonstrate that there are two defect levels induced by OH - impurities. The O p orbitals form two superposed occupied O bands, located above the valence bands (VBs), and the H s orbitals do the major contribution to an empty H band, located below the conduction bands. Because of the surface effect, the O bands move downward, toward the VBs with respect to the relevant bands in the bulk case, and this leads to narrowing of the VB → O gap and widening of the O → H gap which corresponds to the first optical absorption. Additionally, the study on the formation of OH - impurities shows that isolated hydroxyls are favorite to substitute fluorine ions and adsorb on the surface energetically in CaF 2. On the other hand, the formation of OH - impurities may also be due to the aggregation of separated oxygen and hydrogen impurities in CaF 2. The formation of OH - impurities could be avoided in CaF 2 crystal if we can control the concentration of the oxygen atoms near the surface, because oxygen does the primary contribution to the formation of OH - impurities in CaF 2.
AB - OH - in CaF 2 crystal and the (111) surface have been studied by using density functional theory (DFT) with hybrid exchange potentials, namely, DFT-B3PW. Three bulk and 20 surface OH - configurations were investigated, and we found that Configs OH (111) for the bulk case and HO11(\) and HOfull(\) for the surface case are the energetically most favorable configurations. For the (111) CaF 2 surface atomic layers, the surface hydroxyls lead to a remarkable XY-translation and a dilating effect in the Z-direction, overcoming the surface shrinking effect in the perfect slab. Bond population analysis shows that there is a considerable covalency between the oxygen and hydrogen atoms, and the surface effect strengthens the covalency of surface OH - impurities. The studies on band structures and density of states of the surface OH --impurity systems demonstrate that there are two defect levels induced by OH - impurities. The O p orbitals form two superposed occupied O bands, located above the valence bands (VBs), and the H s orbitals do the major contribution to an empty H band, located below the conduction bands. Because of the surface effect, the O bands move downward, toward the VBs with respect to the relevant bands in the bulk case, and this leads to narrowing of the VB → O gap and widening of the O → H gap which corresponds to the first optical absorption. Additionally, the study on the formation of OH - impurities shows that isolated hydroxyls are favorite to substitute fluorine ions and adsorb on the surface energetically in CaF 2. On the other hand, the formation of OH - impurities may also be due to the aggregation of separated oxygen and hydrogen impurities in CaF 2. The formation of OH - impurities could be avoided in CaF 2 crystal if we can control the concentration of the oxygen atoms near the surface, because oxygen does the primary contribution to the formation of OH - impurities in CaF 2.
UR - http://www.scopus.com/inward/record.url?scp=84858321692&partnerID=8YFLogxK
U2 - 10.1021/jp211075g
DO - 10.1021/jp211075g
M3 - Article
AN - SCOPUS:84858321692
SN - 1932-7447
VL - 116
SP - 6392
EP - 6400
JO - Journal of Physical Chemistry C
JF - Journal of Physical Chemistry C
IS - 10
ER -