A large range micro-XZ-stage with monolithic integration of electrothermal bimorph actuators and electrostatic comb drives

Xiaoyang Zhang, Liang Zhou, Huikai Xie*

*此作品的通讯作者

科研成果: 书/报告/会议事项章节会议稿件同行评审

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摘要

This paper reports a micro-XZ-stage with large quasi-static displacement in both in-plane and out-of-plane directions, achieved by monolithic integration of large-vertical-displacement electrothermal Cu/W bimorph actuators and large-lateral-displacement electrostatic comb drives for the first time. The integration is enabled by a unique release process that can simultaneously attain high-aspect-ratio silicon comb drives and complete silicon removal underneath bimorph actuators. Over 40 μm in-plane displacement at 109.6 Vdc for the comb drives and 100 μm out-of-plane displacements at only 13.5 Vdc for the bimorph actuators have been realized for the fabricated device. The resonances of the out-of-plane bimorph actuators and the in-plane comb drives are 515 Hz and 477 Hz, respectively.

源语言英语
主期刊名MEMS 2016 - 29th IEEE International Conference on Micro Electro Mechanical Systems
出版商Institute of Electrical and Electronics Engineers Inc.
71-74
页数4
ISBN(电子版)9781509019731
DOI
出版状态已出版 - 26 2月 2016
已对外发布
活动29th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2016 - Shanghai, 中国
期限: 24 1月 201628 1月 2016

出版系列

姓名Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
2016-February
ISSN(印刷版)1084-6999

会议

会议29th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2016
国家/地区中国
Shanghai
时期24/01/1628/01/16

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引用此

Zhang, X., Zhou, L., & Xie, H. (2016). A large range micro-XZ-stage with monolithic integration of electrothermal bimorph actuators and electrostatic comb drives. 在 MEMS 2016 - 29th IEEE International Conference on Micro Electro Mechanical Systems (页码 71-74). 文章 7421560 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS); 卷 2016-February). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MEMSYS.2016.7421560