@inproceedings{635a79cda58a45e881fa8d12f079f0c7,
title = "A K-band low noise amplifier with on-chip baluns in 90nm CMOS",
abstract = "This paper presents a CMOS K-band low noise amplifier (LNA). Pseudo differential structure with on-chip balun has more advantages than single-end in system-on-chip (SOC) and so forth. In this design, two on-chip baluns are inserted in the LNA for single-in and single-out. Some inter-digital capacitors and a transformer are employed for matching to reduce the number of the inductors. The proposed LNA is fabricated in 90 nm CMOS process, achieved a gain of 20dB at 23.5 GHz, a 3-dB bandwidth of 2 GHz (from 22.7 to 24.7 GHz), and a noise figure of 3.6 dB with an input return loss of 17 dB, while consuming 16.5 mW with 1V power supply.",
keywords = "CMOS, K-band low noise amplifier, On-chip baluns, Pseudo differential",
author = "Zicheng Liu and Peng Gao and Zhiming Chen",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 ; Conference date: 26-08-2015 Through 28-08-2015",
year = "2016",
month = jan,
day = "8",
doi = "10.1109/RFIT.2015.7377947",
language = "English",
series = "2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "241--243",
booktitle = "2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings",
address = "United States",
}