摘要
This paper presents a CMOS K-band low noise amplifier (LNA). Pseudo differential structure with on-chip balun has more advantages than single-end in system-on-chip (SOC) and so forth. In this design, two on-chip baluns are inserted in the LNA for single-in and single-out. Some inter-digital capacitors and a transformer are employed for matching to reduce the number of the inductors. The proposed LNA is fabricated in 90 nm CMOS process, achieved a gain of 20dB at 23.5 GHz, a 3-dB bandwidth of 2 GHz (from 22.7 to 24.7 GHz), and a noise figure of 3.6 dB with an input return loss of 17 dB, while consuming 16.5 mW with 1V power supply.
| 源语言 | 英语 |
|---|---|
| 主期刊名 | 2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings |
| 出版商 | Institute of Electrical and Electronics Engineers Inc. |
| 页 | 241-243 |
| 页数 | 3 |
| ISBN（电子版） | 9781467377942 |
| DOI | |
| 出版状态 | 已出版 - 8 1月 2016 |
| 活动 | IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Sendai, 日本 期限: 26 8月 2015 → 28 8月 2015 |
出版系列
| 姓名 | 2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings |
|---|
会议
| 会议 | IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 |
|---|---|
| 国家/地区 | 日本 |
| 市 | Sendai |
| 时期 | 26/08/15 → 28/08/15 |
指纹
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Liu, Z., Gao, P., & Chen, Z. (2016). A K-band low noise amplifier with on-chip baluns in 90nm CMOS. 在 2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings (页码 241-243). 文章 7377947 (2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RFIT.2015.7377947