TY - GEN
T1 - A Hybrid Integrated W-Band 4-Element Phased-Array Transceiver Front-End Achieving 21.6% Full TX Peak PAE at 14.8dBm Output Power and <1°/dB Phase/Gain Resolution in 65-nm CMOS Technology
AU - Zhu, Wei
AU - Zhang, Jian
AU - Ying, Jiazhi
AU - Yi, Xiangjie
AU - Wang, Yan
AU - Sun, Houjun
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - W-band phased arrays for radar and B5G/6G communication systems have obtained an ever-increasing attention [1]-[6]. Due to the challenges of lower active gain and higher passive loss, most W-band transceiver (TRX) front-end (FE) do not integrate T/R switches, attenuators (ATTs) and high resolution phase shifters (PSs) [1]-[6], which will significantly reduce the system performance and increase the die area. To address this challenge, we have reported a coupled-line (CL)-based implementation mechanism of a W-band T/R switch, PS and ATT in [7]. In order to further advance the evolution of the W-band TRX FE and address the issues of TX/RX isolation, power efficiency as well as die area. This work presents a hybrid integrated W-band 4-element phased-array TRX FE in 65-nm CMOS technology. A hybrid integrated architecture is proposed to integrate the functions of phase shifting and attenuation into active amplifiers to reduce the IL and die area of the PSs and the ATTs, and greatly improve the power and area efficiency of the TRX FE. A CL-based isolation enhanced T/R switch is proposed to increase the TX/RX isolation while remaining low IL. Benefiting from the proposed techniques, the proposed W-band TRX FE prototype achieves (1) 10.2%/21.6% OP1dB/peak PAE at 10.8/14.8dBm output power (Pout), (2) <1°/dB phase/gain resolution, (3) 53% area reduction compared to the previous version in [7].
AB - W-band phased arrays for radar and B5G/6G communication systems have obtained an ever-increasing attention [1]-[6]. Due to the challenges of lower active gain and higher passive loss, most W-band transceiver (TRX) front-end (FE) do not integrate T/R switches, attenuators (ATTs) and high resolution phase shifters (PSs) [1]-[6], which will significantly reduce the system performance and increase the die area. To address this challenge, we have reported a coupled-line (CL)-based implementation mechanism of a W-band T/R switch, PS and ATT in [7]. In order to further advance the evolution of the W-band TRX FE and address the issues of TX/RX isolation, power efficiency as well as die area. This work presents a hybrid integrated W-band 4-element phased-array TRX FE in 65-nm CMOS technology. A hybrid integrated architecture is proposed to integrate the functions of phase shifting and attenuation into active amplifiers to reduce the IL and die area of the PSs and the ATTs, and greatly improve the power and area efficiency of the TRX FE. A CL-based isolation enhanced T/R switch is proposed to increase the TX/RX isolation while remaining low IL. Benefiting from the proposed techniques, the proposed W-band TRX FE prototype achieves (1) 10.2%/21.6% OP1dB/peak PAE at 10.8/14.8dBm output power (Pout), (2) <1°/dB phase/gain resolution, (3) 53% area reduction compared to the previous version in [7].
UR - http://www.scopus.com/inward/record.url?scp=85182283153&partnerID=8YFLogxK
U2 - 10.1109/A-SSCC58667.2023.10347955
DO - 10.1109/A-SSCC58667.2023.10347955
M3 - Conference contribution
AN - SCOPUS:85182283153
T3 - 2023 IEEE Asian Solid-State Circuits Conference, A-SSCC 2023
BT - 2023 IEEE Asian Solid-State Circuits Conference, A-SSCC 2023
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 19th IEEE Asian Solid-State Circuits Conference, A-SSCC 2023
Y2 - 5 November 2023 through 8 November 2023
ER -