TY - GEN
T1 - A comparison study of tantalum-nitrogen and chromium absorber in extreme ultraviolet mask fabrication using electron-beam lithography simulation
AU - Guorong, Zhao
AU - Yanqiu, Li
PY - 2007
Y1 - 2007
N2 - EUVL will be a most likely candidate for the next generation lithography beyond 32nm node. The proper material of Extreme Ultraviolet ( EUV ) mask absorber is crucial. Many researches indicated that tantalum-nitrogen (TaN) and chromium (Cr) are the better candidates. However, these studies mainly focus on the optical performance. Researchers pay little attention to the influence of absorber material on mask fabrication by Electron Beam Lithography (EBL). In this paper, using an EBL module of in house software MicroCruiser, the study of comparison of the influence of TaN and Cr absorber on EUV mask fabrication is presented from the perspective of the backscattering coefficient, the energy deposition of BE in resist, the line edge roughness of patter profile, and the side wall angle of the pattern profile, respectively. An EBL module of MicroCruiser is developed including complex inelastic scattering and relativistic correction of high energy electron which were not considered in previous simulation software of EBL.
AB - EUVL will be a most likely candidate for the next generation lithography beyond 32nm node. The proper material of Extreme Ultraviolet ( EUV ) mask absorber is crucial. Many researches indicated that tantalum-nitrogen (TaN) and chromium (Cr) are the better candidates. However, these studies mainly focus on the optical performance. Researchers pay little attention to the influence of absorber material on mask fabrication by Electron Beam Lithography (EBL). In this paper, using an EBL module of in house software MicroCruiser, the study of comparison of the influence of TaN and Cr absorber on EUV mask fabrication is presented from the perspective of the backscattering coefficient, the energy deposition of BE in resist, the line edge roughness of patter profile, and the side wall angle of the pattern profile, respectively. An EBL module of MicroCruiser is developed including complex inelastic scattering and relativistic correction of high energy electron which were not considered in previous simulation software of EBL.
KW - Absorber
KW - Chromium(Cr)
KW - Electron beam lithography (EBL)
KW - Extreme ultraviolet lithography (EUVL)
KW - Mask
KW - Tantalum-nitrogen(TaN)
UR - http://www.scopus.com/inward/record.url?scp=36249028085&partnerID=8YFLogxK
U2 - 10.1117/12.729031
DO - 10.1117/12.729031
M3 - Conference contribution
AN - SCOPUS:36249028085
SN - 0819467456
SN - 9780819467454
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Photomask and Next-Generation Lithography Mask Technology XIV
T2 - Photomask and Next-Generation Lithography Mask Technology XIV
Y2 - 17 April 2007 through 19 April 2007
ER -