A CMOS 210-GHz fundamental transceiver with OOK modulation

Zheng Wang, Pei Yuan Chiang, Peyman Nazari, Chun Cheng Wang, Zhiming Chen, Payam Heydari

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摘要

This paper presents a 210-GHz transceiver with OOK modulation in a 32-nm SOI CMOS process $(f-{T}/f-{\max}=\hbox{ 250/320 GHz})$. The transmitter (TX) employs a 2 $\times$ 2 spatial combining array consisting of a double-stacked cross-coupled voltage controlled oscillator (VCO) at 210 GHz with an on-off-keying (OOK) modulator, a power amplifier (PA) driver, a novel balun-based differential power distribution network, four PAs, and an on-chip 2 $\times$ 2 dipole antenna array. The noncoherent receiver (RX) utilizes a direct detection architecture consisting of an on-chip antenna, a low-noise amplifier (LNA), and a power detector. The VCO generates measured $-$13.5-dBm output power, and the PA shows a measured 15-dB gain and 4.6-dBm $P\rm sat. The LNA exhibits a measured in-band gain of 18 dB and minimum in-band noise figure (NF) of 11 dB. The TX achieves an EIRP of 5.13 dBm at 10 dB back-off from saturated power. It achieves an estimated EIRP of 15.2 dBm when the PAs are fully driven. This is the first demonstration of a fundamental frequency CMOS transceiver at the 200-GHz frequency range.

源语言英语
文章编号6718086
页(从-至)564-580
页数17
期刊IEEE Journal of Solid-State Circuits
49
3
DOI
出版状态已出版 - 3月 2014
已对外发布

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引用此

Wang, Z., Chiang, P. Y., Nazari, P., Wang, C. C., Chen, Z., & Heydari, P. (2014). A CMOS 210-GHz fundamental transceiver with OOK modulation. IEEE Journal of Solid-State Circuits, 49(3), 564-580. 文章 6718086. https://doi.org/10.1109/JSSC.2013.2297415