TY - GEN
T1 - A 90-120 GHz driver amplifier with 70nm InP PHEMT
AU - Liu, Jun
AU - Yu, Weihua
AU - Lv, Xin
N1 - Publisher Copyright:
© 2017 IEEE.
PY - 2018/7/25
Y1 - 2018/7/25
N2 - This paper presents the design and simulation of a three-stage driver amplifier with a 70-nm InAlAs/InGaAs/InP pseudomorphic high electron-mobility transistor (PHEMT) technology. The three-stage driver amplifier is designed through schematic simulation and momentum EM co-simulation by ADS software with a 2×25 μm gate length PHEMT. The high-low pass filter structures are used for matching network, edge-coupled lines are selected to block dc voltage, radial stubs are chosen as RF ground and shunt RC networks are included in the bias circuitry to maintain amplifier stability. Ground coplanar waveguide (GCPW) structure is added in input and output port. The three-stage driver amplifier provides more than 18dB linear gain between 90 and 120GHz, a P-1dB at the output of 7dBm, more than 10dBm saturated output power at 110GHz, consumes 58.9mW and the size is about 2.3×1.1 mm2.
AB - This paper presents the design and simulation of a three-stage driver amplifier with a 70-nm InAlAs/InGaAs/InP pseudomorphic high electron-mobility transistor (PHEMT) technology. The three-stage driver amplifier is designed through schematic simulation and momentum EM co-simulation by ADS software with a 2×25 μm gate length PHEMT. The high-low pass filter structures are used for matching network, edge-coupled lines are selected to block dc voltage, radial stubs are chosen as RF ground and shunt RC networks are included in the bias circuitry to maintain amplifier stability. Ground coplanar waveguide (GCPW) structure is added in input and output port. The three-stage driver amplifier provides more than 18dB linear gain between 90 and 120GHz, a P-1dB at the output of 7dBm, more than 10dBm saturated output power at 110GHz, consumes 58.9mW and the size is about 2.3×1.1 mm2.
UR - http://www.scopus.com/inward/record.url?scp=85051115629&partnerID=8YFLogxK
U2 - 10.1109/APCAP.2017.8420777
DO - 10.1109/APCAP.2017.8420777
M3 - Conference contribution
AN - SCOPUS:85051115629
T3 - 2017 IEEE 6th Asia-Pacific Conference on Antennas and Propagation, APCAP 2017 - Proceeding
SP - 1
EP - 3
BT - 2017 IEEE 6th Asia-Pacific Conference on Antennas and Propagation, APCAP 2017 - Proceeding
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 6th IEEE Asia-Pacific Conference on Antennas and Propagation, APCAP 2017
Y2 - 16 October 2017 through 19 October 2017
ER -