A 33~170 GHz cascode amplifier based on InP DHBT technology

Bo Wu Wang; Wei Hua Yu; Yan Fei Hou; Qin Yu; Yan Sun; Wei Cheng; Ming Zhou

doi:10.11972/j.issn.1001-9014.2023.02.008

A 33~170 GHz cascode amplifier based on InP DHBT technology

投稿的翻译标题: 基于 InP DHBT 工艺的 33~170 GHz 共源共栅放大器

Bo Wu Wang, Wei Hua Yu, Yan Fei Hou, Qin Yu, Yan Sun, Wei Cheng, Ming Zhou^*

^*此作品的通讯作者

集成电路与电子学院

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

In this paper，a wide band cascode power amplifier working at 33~170 GHz is designed，based on the 500 nm InP dual-heterojunction bipolar transistor（DHBT）process. Two pairs of parallel input and output stub lines can effectively expand the working bandwidth. The output coupling line compensates the high frequency transmission. The measured results show that the maximum gain of the amplifier is 11. 98 dB at 115 GHz，the rel⁃ ative bandwidth is 134. 98 %，the gain flatness is ±2 dB，the gain is better than 10 dB and the output power is bet⁃ ter than 1 dBm in the operating bandwidth.

投稿的翻译标题	基于 InP DHBT 工艺的 33~170 GHz 共源共栅放大器
源语言	英语
页（从-至）	197-200
页数	4
期刊	Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves
卷	42
期	2
DOI	https://doi.org/10.11972/j.issn.1001-9014.2023.02.008
出版状态	已出版 - 4月 2023

访问文件

10.11972/j.issn.1001-9014.2023.02.008

其它文件与链接

链接到 Scopus 的出版物

引用此

@article{6c88eac9edf54e5a8180d16adeef316e,

title = "A 33~170 GHz cascode amplifier based on InP DHBT technology",

abstract = "In this paper，a wide band cascode power amplifier working at 33~170 GHz is designed，based on the 500 nm InP dual-heterojunction bipolar transistor（DHBT）process. Two pairs of parallel input and output stub lines can effectively expand the working bandwidth. The output coupling line compensates the high frequency transmission. The measured results show that the maximum gain of the amplifier is 11. 98 dB at 115 GHz，the rel⁃ ative bandwidth is 134. 98 %，the gain flatness is ±2 dB，the gain is better than 10 dB and the output power is bet⁃ ter than 1 dBm in the operating bandwidth.",

keywords = "InP dual-heterojunction bipolar transistor（InP DHBT）, cascode amplifiers, monolithic microwave integrated circuit （MMIC）, wide band",

author = "Wang, {Bo Wu} and Yu, {Wei Hua} and Hou, {Yan Fei} and Qin Yu and Yan Sun and Wei Cheng and Ming Zhou",

year = "2023",

month = apr,

doi = "10.11972/j.issn.1001-9014.2023.02.008",

language = "English",

volume = "42",

pages = "197--200",

journal = "Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves",

issn = "1001-9014",

publisher = "Chinese Optical Society",

number = "2",

}

TY - JOUR

T1 - A 33~170 GHz cascode amplifier based on InP DHBT technology

AU - Wang, Bo Wu

AU - Yu, Wei Hua

AU - Hou, Yan Fei

AU - Yu, Qin

AU - Sun, Yan

AU - Cheng, Wei

AU - Zhou, Ming

PY - 2023/4

Y1 - 2023/4

N2 - In this paper，a wide band cascode power amplifier working at 33~170 GHz is designed，based on the 500 nm InP dual-heterojunction bipolar transistor（DHBT）process. Two pairs of parallel input and output stub lines can effectively expand the working bandwidth. The output coupling line compensates the high frequency transmission. The measured results show that the maximum gain of the amplifier is 11. 98 dB at 115 GHz，the rel⁃ ative bandwidth is 134. 98 %，the gain flatness is ±2 dB，the gain is better than 10 dB and the output power is bet⁃ ter than 1 dBm in the operating bandwidth.

AB - In this paper，a wide band cascode power amplifier working at 33~170 GHz is designed，based on the 500 nm InP dual-heterojunction bipolar transistor（DHBT）process. Two pairs of parallel input and output stub lines can effectively expand the working bandwidth. The output coupling line compensates the high frequency transmission. The measured results show that the maximum gain of the amplifier is 11. 98 dB at 115 GHz，the rel⁃ ative bandwidth is 134. 98 %，the gain flatness is ±2 dB，the gain is better than 10 dB and the output power is bet⁃ ter than 1 dBm in the operating bandwidth.

KW - InP dual-heterojunction bipolar transistor（InP DHBT）

KW - cascode amplifiers

KW - monolithic microwave integrated circuit （MMIC）

KW - wide band

UR - http://www.scopus.com/inward/record.url?scp=85161598455&partnerID=8YFLogxK

U2 - 10.11972/j.issn.1001-9014.2023.02.008

DO - 10.11972/j.issn.1001-9014.2023.02.008

M3 - Article

AN - SCOPUS:85161598455

SN - 1001-9014

VL - 42

SP - 197

EP - 200

JO - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

JF - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

IS - 2

ER -

A 33~170 GHz cascode amplifier based on InP DHBT technology

摘要

访问文件

其它文件与链接

指纹

引用此