5G 毫米波 GaN 收发前端芯片研究

The transceiver front-end chip is a key component in the 5G hybrid beam forming system，high efficiency and low noise are the key indicators of transceiver front-end chip. A Ka-band front end MMIC with GaN integrated technology was developed in this paper. Harmonic matching technology was used to improve the efficiency of transmitting path. The noise figure of the receiving circuit was reduced by correctly selecting the topology of the receiving circuit and optimizing the design of the prematching network. The test results show that in 37-40 GHz，the saturation power of the transmission path is greater than 36 dBm，the saturation efficiency is greater than 26%，the third-order intermodulation distortion（IMD3）is less than -33 dBc at 8 dB output power back-off. The gain and noise figure of the receiver are greater than 19 dB and less than 3.6 dB，respectively. The transceiver front-end chip can be applied to 5G millimeter wave base station.