TY - JOUR
T1 - 2D/2D Electrical Contacts in the Monolayer WSe2 Transistors
T2 - A First-Principles Study
AU - Zhang, Qiaoxuan
AU - Wei, Jing
AU - Liu, Junchen
AU - Wang, Zhongchang
AU - Lei, Ming
AU - Quhe, Ruge
N1 - Publisher Copyright:
© 2019 American Chemical Society.
PY - 2019/5/24
Y1 - 2019/5/24
N2 - Seeking a proper electrode contact for two-dimensional materials such as monolayer (ML) WSe2 is of vital importance for ultrathin electronic devices. Here, we investigate a series of novel 2D/2D electrical contacts in sub-10 nm ML WSe2 transistors by first-principles calculations. We find that the NbSe2, borophene, Mo2CF2, and Mo2CO2 electrodes form p-type Ohmic contact with ML WSe2, while the Ti2C(OH)2 forms n-type Ohmic contact and Ti2C forms n-type Schottky contact. Particularly, the on-current, delay time, and power dissipation for the NbSe2 and Ti2C(OH)2 electrodes in the transistors approach the international technology roadmap for semiconductors (ITRS) 2013 requirements for high-performance (low-power) applications at the gate length of 5 nm (7 nm). A formalism is proposed to analyze the 2D/2D electrical contacts from the device application viewpoint, thereby providing guidelines for the design of future 2D semiconductor-based devices.
AB - Seeking a proper electrode contact for two-dimensional materials such as monolayer (ML) WSe2 is of vital importance for ultrathin electronic devices. Here, we investigate a series of novel 2D/2D electrical contacts in sub-10 nm ML WSe2 transistors by first-principles calculations. We find that the NbSe2, borophene, Mo2CF2, and Mo2CO2 electrodes form p-type Ohmic contact with ML WSe2, while the Ti2C(OH)2 forms n-type Ohmic contact and Ti2C forms n-type Schottky contact. Particularly, the on-current, delay time, and power dissipation for the NbSe2 and Ti2C(OH)2 electrodes in the transistors approach the international technology roadmap for semiconductors (ITRS) 2013 requirements for high-performance (low-power) applications at the gate length of 5 nm (7 nm). A formalism is proposed to analyze the 2D/2D electrical contacts from the device application viewpoint, thereby providing guidelines for the design of future 2D semiconductor-based devices.
KW - 2D material
KW - first-principles calculation
KW - interface
KW - quantum transport
KW - transistor
UR - http://www.scopus.com/inward/record.url?scp=85078393779&partnerID=8YFLogxK
U2 - 10.1021/acsanm.9b00290
DO - 10.1021/acsanm.9b00290
M3 - Article
AN - SCOPUS:85078393779
SN - 2574-0970
VL - 2
SP - 2796
EP - 2805
JO - ACS Applied Nano Materials
JF - ACS Applied Nano Materials
IS - 5
ER -