摘要
In this paper, a two dimensional (2D) device simulation was used to investigate Kink phenomena in InAlAs/InGaAs HEMT's. Impact ionization was taken into account and it is responsible for the kink. It is found that the accumulation of holes in the gate-source overlap region generated by the impact ionization has the channel electron density increase at the bias point where kink appears. At high drain to source voltage, there is a rapid increase in the drain conductance, and it is known as an on-state breakdown.
| 源语言 | 英语 |
|---|---|
| 页 | 320-323 |
| 页数 | 4 |
| DOI | |
| 出版状态 | 已出版 - 2013 |
| 活动 | 2013 3rd IEEE International Conference on Microwave Technology and Computational Electromagnetics, ICMTCE 2013 - Qingdao, 中国 期限: 27 8月 2013 → 29 8月 2013 |
会议
| 会议 | 2013 3rd IEEE International Conference on Microwave Technology and Computational Electromagnetics, ICMTCE 2013 |
|---|---|
| 国家/地区 | 中国 |
| 市 | Qingdao |
| 时期 | 27/08/13 → 29/08/13 |
指纹
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Wang, Z., Luo, X., Yu, W., & Lv, X. (2013). 2D Simulations of Kink phenomenon in InAlAs/InGaAs/InP HEMTs. 320-323. 论文发表于 2013 3rd IEEE International Conference on Microwave Technology and Computational Electromagnetics, ICMTCE 2013, Qingdao, 中国. https://doi.org/10.1109/ICMTCE.2013.6812445