长期从事计算材料化学方面的工作,擅长第一性原理计算、分子动力学、机器学习及相场理论等模拟方法。对纳米材料的生长机理与性能调控有着深入的理解,提出了利用低对称性衬底外延生长单晶二维材料的普适方案,目前该方案已被广泛应用于制备晶圆级单晶材料。
1. 石墨烯、六方氮化硼(hBN)和过渡金属硫化物(TMDC)等二维材料的外延生长机理以及层数调控机理;
2. 半导体纳米材料的非外延生长机理;
3. 材料的合成-结构-性能的构效关系。
2017.03-2021.02 韩国国立蔚山科学技术院(UNIST),材料科学与工程专业,工学博士
2013.09-2016.06 山东大学,材料工程专业,工学硕士
2009.09-2013.07 昆明理工大学,材料科学与工程专业,工学学士
2022.09-至今 北京理工大学化学与化工学院,教授
2021.03-2022.08 韩国基础科学研究院,多维碳材料中心,博士后
2016.10-2017.02 韩国基础科学研究院,多维碳材料中心,研究员
迄今在国内外学术刊物及会议上发表学术论文20余篇,其中以第一/共一作者身份在Nature (2篇), Nat. Commun., Chem. Rev., Adv. Funct. Mater.等杂志发表论文12篇,以合作者身份在Science,Nat. Commun., J. Am. Chem. Soc.及Adv. Mater.等杂志发表论文多篇。
代表性论文
1. K. Ma#, L. Zhang#, S. Jin, Y. Wang, S. Yoon. H. Hwang, J. Oh, D. Jeong, M. Wang, S. Chatterjee, G. Kim, A. Jang, J. Yang, S. Ryu, H. Jeong, R. Ruoff*, M. Chhowalla*, F. Ding*, and H. Shin*. Epitaxial Single-Crystal Hexagonal Boron Nitride Multi-Layers on Ni (111). Nature 2022, 606, 88-93.
2. L. Wang#, X. Xu#, L. Zhang#, R. Qiao#, M. Wu, Z. Wang, S. Zhang, J. Liang, Z. Zhang, Z. Zhang, W. Chen, X. Xie, J. Zong, Y. Shan, Y. Guo, M. Willinger, H. Wu, Q. Li, W. Wang, P. Gao, S. Wu, Y. Zhang, Y. Jiang, D. Yu, E. Wang, X. Bai*, Z.-J. Wang*, F. Ding*, K. Liu*. Epitaxial growth of a 100-square-centimetre single-crystal hexagonal boron nitride monolayer on copper. Nature 2019, 570, 91-95.(高被引文章)
3. L. Zhang, P. Peng, F. Ding*. Epitaxial Growth of Two-dimensional Materials on High-Index Substrate Surfaces. Adv. Funct. Mater. 2021,31, 2100503.
4. L. Zhang#, J. Dong#, F. Ding*. Strategies, Status and Challenges in Wafer Scale Single Crystalline Two-dimensional Materials Synthesis. Chem. Rev. 2021, 121, 6321–6372. (封面文章)
5. X. Li#, G. Wu#, L. Zhang#, D. Huang, Y. Li, R. Zhang, M. Li, L. Zhu, J. Guo, T. Huang, J. Shen, X. Wei, K. Yu, J. Dong, M. Altman, R. Ruoff, Y. Duan, J.Yu, Z. Wang, X. Huang*, F. Ding*, H. Shi*, W. Tang. Single-Crystal Two-Dimensional Material Epitaxy on Tailored Non-Single-Crystal Substrates. Nat. Commun. 2022, 13, 1773.
6. L. Zhang, F. Ding*. Mechanism of Corrugated Graphene Moiré Superstructures on Transition-Metal Surfaces. ACS Appl. Mater. Interfaces. 13, 56674.
7. L. Zhang, J. Dong, Z. Guan, X. Zhang, F. Ding*. The alignment-dependent properties and applications of graphene moiré superstructures on the Ru(0001) surface. Nanoscale. 12, 12831-12839.
8. L. Zhang, F. Ding*. The stable interfaces between various edges of hBN and step edges of Cu surface in hBN epitaxial growth: A comprehensive theoretical exploration. 2D Mater. 8, 034004.
9. H. Sun, # F. Liu#, L. Zhang#, K. Ko#, B. McLean, H. An, S. Kim, M. Huang, M. Willinger, R. Ruoff, J. Suh*, Z. Wang*, F. Ding*. Bottom-up Growth of Graphene Nanospears and Nanoribbons. Adv. Funct. Mater. 2022,2206961.
10. J. Dong#, L. Zhang#, B. Wu, F. Ding, Y. Liu*. Theoretical Study of Chemical Vapor Deposition Synthesis of Graphene and Beyond: Challenges and Perspectives. J. Phys. Chem. Lett. 12, 7942-7963.
11. J. Dong, L. Zhang, X. Dai, F. Ding*. The epitaxy of 2D materials growth. Nat. Commun. 2020, 11, 5862.
12. S. Jin, M. Huang, Y. Kwon, L. Zhang, B.-W. Li, S. Oh, J. Dong, D. Luo, M. Biswal, B. V. Cunning, P. V. Bakharev, I. Moon, W. J. Yoo, D. C. Camacho-Mojica, Y.-J. Kim, S. H. Lee, B. Wang, W. K. Seong, M. Saxena, F. Ding, H.-J. Shin*, R. S. Ruoff*. Colossal grain growth yields single-crystal metal foils by contact-free annealing. Science 2018, 362, 1021-1025.
2015 年,联合国成员国同意 17 项可持续发展目标 (SDG),以消除贫困、保护地球并确保全人类的繁荣。此人的工作有助于实现下列可持续发展目标: