ZnO缓冲层对Mg< 0.3< Zn<0.7<O紫外探测器的影响

Mg< 0.3< Zn<0.7<O thin films were prepared by sol-gel method, and deep-ultraviolet detectors with metal-semiconductor-metal structure were fabricated. Effects of high quality ZnO buffer layer on the optical properties of the Mg< 0.3< Zn<0.7<O films and the I-V characteristics of the detectors were investigated. The results show that a slight red shift occurrs in the UV-visible absorption spectrum of Mg< 0.3< Zn<0.7<O thin film with ZnO buffer layer. However, the introduction of the ZnO buffer layer obviously improves the crystal quality of the film. Furthermore, the I-V curves of the ultraviolet detectors exhibit that the photocurrent of the device increases significantly with the ZnO buffer layer. At a bias of 20 V, the responsivity of the detector increases from 0.035 A/W to 0.63 A/W.