XPS analysis of silicon oxycarbide formed on the surface of Rf-sputter deposited SiC thin films

Kun Xue; Li Sha Niu; Hui Ji Shi; Jiwen Liu

doi:10.4028/0-87849-456-1.1871

XPS analysis of silicon oxycarbide formed on the surface of Rf-sputter deposited SiC thin films

Kun Xue^*, Li Sha Niu, Hui Ji Shi, Jiwen Liu

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

5 Citations (Scopus)

Abstract

Sputter deposited SiC films with and without annealing were characterized using X-ray photoelectron spectroscopy (XPS). A complex transition layer, containing silicon oxycarbide (SiC_xO_y), between the SiO₂ layer grown during extended exposure to ambient air or annealing and SiC substrate was investigated. Furthermore, the presence of excessive amorphous carbon was detected in the near-surface region for annealed sample. We justified the differences of composition and chemical bonding in these two oxide layers in terms of different oxidation kinetics involved.

Original language	English
Pages (from-to)	1871-1874
Number of pages	4
Journal	Key Engineering Materials
Volume	353-358
Issue number	PART 3
DOIs	https://doi.org/10.4028/0-87849-456-1.1871
Publication status	Published - 2007
Externally published	Yes
Event	Asian Pacific Conference for Fracture and Strength (APCFS'06) - Sanya, Hainan Island, China Duration: 22 Nov 2006 → 25 Nov 2006

Keywords

Air-exposure
Annealing
Oxide/SiC interface
SiC thin films
XPS

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10.4028/0-87849-456-1.1871

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Xue, K., Niu, L. S., Shi, H. J., & Liu, J. (2007). XPS analysis of silicon oxycarbide formed on the surface of Rf-sputter deposited SiC thin films. Key Engineering Materials, 353-358(PART 3), 1871-1874. https://doi.org/10.4028/0-87849-456-1.1871

@article{90bc9b8b2957415684142fe9014877c5,

title = "XPS analysis of silicon oxycarbide formed on the surface of Rf-sputter deposited SiC thin films",

abstract = "Sputter deposited SiC films with and without annealing were characterized using X-ray photoelectron spectroscopy (XPS). A complex transition layer, containing silicon oxycarbide (SiCxOy), between the SiO2 layer grown during extended exposure to ambient air or annealing and SiC substrate was investigated. Furthermore, the presence of excessive amorphous carbon was detected in the near-surface region for annealed sample. We justified the differences of composition and chemical bonding in these two oxide layers in terms of different oxidation kinetics involved.",

keywords = "Air-exposure, Annealing, Oxide/SiC interface, SiC thin films, XPS",

author = "Kun Xue and Niu, {Li Sha} and Shi, {Hui Ji} and Jiwen Liu",

year = "2007",

doi = "10.4028/0-87849-456-1.1871",

language = "English",

volume = "353-358",

pages = "1871--1874",

journal = "Key Engineering Materials",

issn = "1013-9826",

publisher = "Trans Tech Publications Ltd.",

number = "PART 3",

note = "Asian Pacific Conference for Fracture and Strength (APCFS'06) ; Conference date: 22-11-2006 Through 25-11-2006",

}

TY - JOUR

T1 - XPS analysis of silicon oxycarbide formed on the surface of Rf-sputter deposited SiC thin films

AU - Xue, Kun

AU - Niu, Li Sha

AU - Shi, Hui Ji

AU - Liu, Jiwen

PY - 2007

Y1 - 2007

N2 - Sputter deposited SiC films with and without annealing were characterized using X-ray photoelectron spectroscopy (XPS). A complex transition layer, containing silicon oxycarbide (SiCxOy), between the SiO2 layer grown during extended exposure to ambient air or annealing and SiC substrate was investigated. Furthermore, the presence of excessive amorphous carbon was detected in the near-surface region for annealed sample. We justified the differences of composition and chemical bonding in these two oxide layers in terms of different oxidation kinetics involved.

AB - Sputter deposited SiC films with and without annealing were characterized using X-ray photoelectron spectroscopy (XPS). A complex transition layer, containing silicon oxycarbide (SiCxOy), between the SiO2 layer grown during extended exposure to ambient air or annealing and SiC substrate was investigated. Furthermore, the presence of excessive amorphous carbon was detected in the near-surface region for annealed sample. We justified the differences of composition and chemical bonding in these two oxide layers in terms of different oxidation kinetics involved.

KW - Air-exposure

KW - Annealing

KW - Oxide/SiC interface

KW - SiC thin films

KW - XPS

UR - http://www.scopus.com/inward/record.url?scp=36049002483&partnerID=8YFLogxK

U2 - 10.4028/0-87849-456-1.1871

DO - 10.4028/0-87849-456-1.1871

M3 - Conference article

AN - SCOPUS:36049002483

SN - 1013-9826

VL - 353-358

SP - 1871

EP - 1874

JO - Key Engineering Materials

JF - Key Engineering Materials

IS - PART 3

T2 - Asian Pacific Conference for Fracture and Strength (APCFS'06)

Y2 - 22 November 2006 through 25 November 2006

ER -

XPS analysis of silicon oxycarbide formed on the surface of Rf-sputter deposited SiC thin films

Abstract

Keywords

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