X-band power heterojunction bipolar transistor

Feng Qian; Xiaojian Chen

X-band power heterojunction bipolar transistor

Feng Qian^*, Xiaojian Chen

^*Corresponding author for this work

Nanjing Electronic Devices Institute

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

This paper describes the design, process and measured results of an X band power HBT. The power HBT has shown the saturated output power of more than 5 W with the maximum power density of more than 2.5 W/mm at frequency of 8 GHz. A DC on-wafer HBT yield of better than 80% was obtained in process by using Φ 76 mm MOCVD wafers.

Original language	English
Pages (from-to)	45-50
Number of pages	6
Journal	Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics
Volume	23
Issue number	1
Publication status	Published - Feb 2003
Externally published	Yes

Keywords

Heterojunction bipolar transistor
Microwave
Power

Cite this

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title = "X-band power heterojunction bipolar transistor",

abstract = "This paper describes the design, process and measured results of an X band power HBT. The power HBT has shown the saturated output power of more than 5 W with the maximum power density of more than 2.5 W/mm at frequency of 8 GHz. A DC on-wafer HBT yield of better than 80% was obtained in process by using Φ 76 mm MOCVD wafers.",

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author = "Feng Qian and Xiaojian Chen",

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AU - Qian, Feng

AU - Chen, Xiaojian

PY - 2003/2

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N2 - This paper describes the design, process and measured results of an X band power HBT. The power HBT has shown the saturated output power of more than 5 W with the maximum power density of more than 2.5 W/mm at frequency of 8 GHz. A DC on-wafer HBT yield of better than 80% was obtained in process by using Φ 76 mm MOCVD wafers.

AB - This paper describes the design, process and measured results of an X band power HBT. The power HBT has shown the saturated output power of more than 5 W with the maximum power density of more than 2.5 W/mm at frequency of 8 GHz. A DC on-wafer HBT yield of better than 80% was obtained in process by using Φ 76 mm MOCVD wafers.

KW - Heterojunction bipolar transistor

KW - Microwave

KW - Power

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M3 - Article

AN - SCOPUS:0141963859

SN - 1000-3819

VL - 23

SP - 45

EP - 50

JO - Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics

JF - Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics

IS - 1

ER -

X-band power heterojunction bipolar transistor

Abstract

Keywords

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