W-Band Silicon-Based Transition Substrate-Integrated Waveguide to Air-Filled Rectangular Waveguide

Cong Li, Wenhao Tan, Hao Luo, Houjun Sun

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Citation (Scopus)

Abstract

A W-band silicon-based transition from substrate integrated waveguide to air-filled rectangular waveguide is proposed and simulated. An aperture coupled patch and matching waveguides is employed to build the transition. The simulated results indicate a good bandwidth of vert mathrm{s}21vert < 0.5 dB from 90.98 GHz to 95.48 GHz. With the characteristic of compact size, convenience of integration and low insertion, the proposed transition can be a good candidate in W-band applications.

Original languageEnglish
Title of host publication2019 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2019 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728121680
DOIs
Publication statusPublished - May 2019
Event11th International Conference on Microwave and Millimeter Wave Technology, ICMMT 2019 - Guangzhou, China
Duration: 19 May 201922 May 2019

Publication series

Name2019 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2019 - Proceedings

Conference

Conference11th International Conference on Microwave and Millimeter Wave Technology, ICMMT 2019
Country/TerritoryChina
CityGuangzhou
Period19/05/1922/05/19

Keywords

  • Silicon-based
  • W-band
  • rectangular waveguide (RWG) transition
  • substrate-integrated waveguide (SIW)

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Li, C., Tan, W., Luo, H., & Sun, H. (2019). W-Band Silicon-Based Transition Substrate-Integrated Waveguide to Air-Filled Rectangular Waveguide. In 2019 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2019 - Proceedings Article 8992590 (2019 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2019 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICMMT45702.2019.8992590