Abstract
A W-band silicon-based transition from substrate integrated waveguide to air-filled rectangular waveguide is proposed and simulated. An aperture coupled patch and matching waveguides is employed to build the transition. The simulated results indicate a good bandwidth of vert mathrm{s}21vert < 0.5 dB from 90.98 GHz to 95.48 GHz. With the characteristic of compact size, convenience of integration and low insertion, the proposed transition can be a good candidate in W-band applications.
Original language | English |
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Title of host publication | 2019 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2019 - Proceedings |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
ISBN (Electronic) | 9781728121680 |
DOIs | |
Publication status | Published - May 2019 |
Event | 11th International Conference on Microwave and Millimeter Wave Technology, ICMMT 2019 - Guangzhou, China Duration: 19 May 2019 → 22 May 2019 |
Publication series
Name | 2019 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2019 - Proceedings |
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Conference
Conference | 11th International Conference on Microwave and Millimeter Wave Technology, ICMMT 2019 |
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Country/Territory | China |
City | Guangzhou |
Period | 19/05/19 → 22/05/19 |
Keywords
- Silicon-based
- W-band
- rectangular waveguide (RWG) transition
- substrate-integrated waveguide (SIW)
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Li, C., Tan, W., Luo, H., & Sun, H. (2019). W-Band Silicon-Based Transition Substrate-Integrated Waveguide to Air-Filled Rectangular Waveguide. In 2019 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2019 - Proceedings Article 8992590 (2019 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2019 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICMMT45702.2019.8992590