TY - JOUR
T1 - W-Band GaN T/R Single Chip With 1-W Output Power and 6.4-dB Noise Figure for AESA Applications
AU - Wang, Yutong
AU - Lin, Feng
AU - Sun, Houjun
AU - Wu, Hongjiang
AU - Xu, Chunliang
AU - Fang, Yuan
AU - Liu, Huidong
AU - Li, Yuanpeng
AU - Cui, Lu
AU - Li, Ming
AU - Wu, Yonghui
AU - Zeng, Zhi
N1 - Publisher Copyright:
© 1963-2012 IEEE.
PY - 2024/2/1
Y1 - 2024/2/1
N2 - This article presents a W-band integrated transceiver (T/R) single chip based on gallium nitride (GaN) high electron mobility transistor (HEMT) technology for active electronically scanned array (AESA) applications. It integrates low-noise receiving, high-power transmitting, and transmit (Tx)-receive (Rx) switching functionalities in a single chip. In the transmitting mode, from 100 to 110 GHz, the measured output power and power added efficiency (PAE) are greater than 1 W and 6.4%, respectively, and the saturation gain is higher than 10 dB. While in the receiving mode, the measured noise figure (NF) is less than 6.5 dB, and the small signal gain is more than 20 dB. The measured switching time between the receiving and transmitting modes is less than 17.6 ns. The T/R single chip occupies an area of 4.8 × 3.9 mm2. To the best of the authors' knowledge, this is the first GaN-integrated transceiver chip operating at more than 100 GHz.
AB - This article presents a W-band integrated transceiver (T/R) single chip based on gallium nitride (GaN) high electron mobility transistor (HEMT) technology for active electronically scanned array (AESA) applications. It integrates low-noise receiving, high-power transmitting, and transmit (Tx)-receive (Rx) switching functionalities in a single chip. In the transmitting mode, from 100 to 110 GHz, the measured output power and power added efficiency (PAE) are greater than 1 W and 6.4%, respectively, and the saturation gain is higher than 10 dB. While in the receiving mode, the measured noise figure (NF) is less than 6.5 dB, and the small signal gain is more than 20 dB. The measured switching time between the receiving and transmitting modes is less than 17.6 ns. The T/R single chip occupies an area of 4.8 × 3.9 mm2. To the best of the authors' knowledge, this is the first GaN-integrated transceiver chip operating at more than 100 GHz.
KW - Gallium nitride (GaN)
KW - W-band
KW - low-noise amplifier (LNA)
KW - power amplifier (PA)
KW - single-pole-double-throw (SPDT) switch
KW - transceiver chip
UR - http://www.scopus.com/inward/record.url?scp=85185201650&partnerID=8YFLogxK
U2 - 10.1109/TMTT.2023.3304987
DO - 10.1109/TMTT.2023.3304987
M3 - Article
AN - SCOPUS:85185201650
SN - 0018-9480
VL - 72
SP - 1056
EP - 1069
JO - IEEE Transactions on Microwave Theory and Techniques
JF - IEEE Transactions on Microwave Theory and Techniques
IS - 2
ER -