VO2-based MEMS mirrors

David Torres; Tongyu Wang; Jun Zhang; Xiaoyang Zhang; Sarah Dooley; Xiaobo Tan; Huikai Xie; Nelson Sepulveda

doi:10.1109/JMEMS.2016.2562609

VO₂-based MEMS mirrors

David Torres, Tongyu Wang, Jun Zhang, Xiaoyang Zhang, Sarah Dooley, Xiaobo Tan, Huikai Xie, Nelson Sepulveda

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

This paper reports the integration of vanadium dioxide (VO₂) thin films in a microelectromechanical systems (MEMS) mirror device, where the actuation is mainly due to the solid-solid phase transition of VO₂. The fabrication process described in this paper provides the details that will enable the integration of VO₂ thin films at any step during the fabrication of rather complex MEMS devices. The present VO₂-based MEMS mirror device is operated electro-thermally through integrated resistive heaters, and its behavior is characterized across the phase transition of VO₂, which occurs at a temperature of 68 °C and spans about 10 °C. The maximum vertical displacement of the mirror platform is 75 μm and it occurs for an input voltage of 1.1 V. This translates to an average power consumption of 6.5 mW per mirror actuator and a total power consumption of 26.1 mW for the entire device. The studies included in this paper are key for future device improvements and further development of MEMS mirror actuation technology, which could include the use of the hysteresis of VO₂ for programming tilting angles in MEMS mirrors.

Original language	English
Article number	7471425
Pages (from-to)	780-787
Number of pages	8
Journal	Journal of Microelectromechanical Systems
Volume	25
Issue number	4
DOIs	https://doi.org/10.1109/JMEMS.2016.2562609
Publication status	Published - Aug 2016
Externally published	Yes

Keywords

Microelectromechanical systems (MEMS)-mirrors
phase-change materials
vanadium dioxide

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10.1109/JMEMS.2016.2562609

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title = "VO2-based MEMS mirrors",

abstract = "This paper reports the integration of vanadium dioxide (VO2) thin films in a microelectromechanical systems (MEMS) mirror device, where the actuation is mainly due to the solid-solid phase transition of VO2. The fabrication process described in this paper provides the details that will enable the integration of VO2 thin films at any step during the fabrication of rather complex MEMS devices. The present VO2-based MEMS mirror device is operated electro-thermally through integrated resistive heaters, and its behavior is characterized across the phase transition of VO2, which occurs at a temperature of 68 °C and spans about 10 °C. The maximum vertical displacement of the mirror platform is 75 μm and it occurs for an input voltage of 1.1 V. This translates to an average power consumption of 6.5 mW per mirror actuator and a total power consumption of 26.1 mW for the entire device. The studies included in this paper are key for future device improvements and further development of MEMS mirror actuation technology, which could include the use of the hysteresis of VO2 for programming tilting angles in MEMS mirrors.",

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author = "David Torres and Tongyu Wang and Jun Zhang and Xiaoyang Zhang and Sarah Dooley and Xiaobo Tan and Huikai Xie and Nelson Sepulveda",

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year = "2016",

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doi = "10.1109/JMEMS.2016.2562609",

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AU - Zhang, Jun

AU - Zhang, Xiaoyang

AU - Dooley, Sarah

AU - Tan, Xiaobo

AU - Xie, Huikai

AU - Sepulveda, Nelson

PY - 2016/8

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AB - This paper reports the integration of vanadium dioxide (VO2) thin films in a microelectromechanical systems (MEMS) mirror device, where the actuation is mainly due to the solid-solid phase transition of VO2. The fabrication process described in this paper provides the details that will enable the integration of VO2 thin films at any step during the fabrication of rather complex MEMS devices. The present VO2-based MEMS mirror device is operated electro-thermally through integrated resistive heaters, and its behavior is characterized across the phase transition of VO2, which occurs at a temperature of 68 °C and spans about 10 °C. The maximum vertical displacement of the mirror platform is 75 μm and it occurs for an input voltage of 1.1 V. This translates to an average power consumption of 6.5 mW per mirror actuator and a total power consumption of 26.1 mW for the entire device. The studies included in this paper are key for future device improvements and further development of MEMS mirror actuation technology, which could include the use of the hysteresis of VO2 for programming tilting angles in MEMS mirrors.

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VO₂-based MEMS mirrors

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Keywords

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