van Hove singularities and tight-binding model in high-temperature superconductor H3Se

Huijuan Cui, Menglei Li, Fawei Zheng, Ping Zhang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Ever since high-Tc superconductivity was found in H3S at 203 K under 200 GPa pressure, researches on hydrogen-rich family including H3S, H3P, and H3Te have been intensively carried out. Among those compounds, H3Se is a promising candidate of the same space group with H3S. In this work, we have thoroughly studied the electronic and phonon structures of H3Se using density functional theory (DFT) calculations. It is demonstrated that the electronic bands of H3Se contain van Hove singularities near the Fermi energy, which play a significant role in the superconductivity of this material. Besides, an accurate tight-binding model is proposed based on the Wannier function interpolations which can capture the main features of the electronic structures of H3Se. Moreover, we have also discussed the phonon dispersions and vibration modes for a better understanding of the phonon–electron interaction in H3Se.

Original languageEnglish
Pages (from-to)2526-2530
Number of pages5
JournalPhysics Letters, Section A: General, Atomic and Solid State Physics
Volume381
Issue number31
DOIs
Publication statusPublished - 21 Aug 2017
Externally publishedYes

Keywords

  • HSe
  • High-temperature superconductor
  • Tight-binding model
  • van Hove singularities

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