Ultralow contact resistance in organic transistors via orbital hybridization

Junpeng Zeng, Daowei He*, Jingsi Qiao*, Yating Li, Li Sun, Weisheng Li, Jiacheng Xie, Si Gao, Lijia Pan, Peng Wang, Yong Xu, Yun Li, Hao Qiu, Yi Shi, Jian Bin Xu, Wei Ji, Xinran Wang*

*Corresponding author for this work

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Abstract

Organic field-effect transistors (OFETs) are of interest in unconventional form of electronics. However, high-performance OFETs are currently contact-limited, which represent a major challenge toward operation in the gigahertz regime. Here, we realize ultralow total contact resistance (Rc) down to 14.0 Ω ∙ cm in C10-DNTT OFETs by using transferred platinum (Pt) as contact. We observe evidence of Pt-catalyzed dehydrogenation of side alkyl chains which effectively reduces the metal-semiconductor van der Waals gap and promotes orbital hybridization. We report the ultrahigh performance OFETs, including hole mobility of 18 cm2 V−1 s−1, saturation current of 28.8 μA/μm, subthreshold swing of 60 mV/dec, and intrinsic cutoff frequency of 0.36 GHz. We further develop resist-free transfer and patterning strategies to fabricate large-area OFET arrays, showing 100% yield and excellent variability in the transistor metrics. As alkyl chains widely exist in conjugated molecules and polymers, our strategy can potentially enhance the performance of a broad range of organic optoelectronic devices.

Original languageEnglish
Article number324
JournalNature Communications
Volume14
Issue number1
DOIs
Publication statusPublished - Dec 2023

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Zeng, J., He, D., Qiao, J., Li, Y., Sun, L., Li, W., Xie, J., Gao, S., Pan, L., Wang, P., Xu, Y., Li, Y., Qiu, H., Shi, Y., Xu, J. B., Ji, W., & Wang, X. (2023). Ultralow contact resistance in organic transistors via orbital hybridization. Nature Communications, 14(1), Article 324. https://doi.org/10.1038/s41467-023-36006-0