Type-II Interface Band Alignment in the vdW PbI2-MoSe2Heterostructure

Junting Xiao; Lei Zhang; Hui Zhou; Ziyi Shao; Jinxin Liu; Yuan Zhao; Youzhen Li; Xiaoliang Liu; Haipeng Xie; Yongli Gao; Jia Tao Sun; Andrew T.S. Wee; Han Huang

doi:10.1021/acsami.0c04985

Type-II Interface Band Alignment in the vdW PbI₂-MoSe₂Heterostructure

Junting Xiao, Lei Zhang, Hui Zhou, Ziyi Shao, Jinxin Liu, Yuan Zhao, Youzhen Li, Xiaoliang Liu, Haipeng Xie, Yongli Gao, Jia Tao Sun, Andrew T.S. Wee, Han Huang^*

^*Corresponding author for this work

School of Integrated Circuits and Electronics

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

Energy band alignments at heterostructure interfaces play key roles in device performance, especially between two-dimensional atomically thin materials. Herein, van der Waals PbI2-MoSe2 heterostructures fabricated by in situ PbI2 deposition on monolayer MoSe2 are comprehensively studied using scanning tunneling microscopy/spectroscopy, atomic force microscopy, photoemission spectroscopy, and Raman and photoluminescence (PL) spectroscopy. PbI2 grows on MoSe2 in a quasi layer-by-layer epitaxial mode. A type-II interface band alignment is proposed between PbI2 and MoSe2 with the conduction band minimum (valence band maximum) located at PbI2 (MoSe2), which is confirmed by first-principles calculations and the existence of interfacial excitons revealed using temperature-dependent PL. Our findings provide a scalable method to fabricate PbI2-MoSe2 heterostructures and new insights into the electronic structures for future device design.

Original language	English
Pages (from-to)	32099-32105
Number of pages	7
Journal	ACS Applied Materials and Interfaces
Volume	12
Issue number	28
DOIs	https://doi.org/10.1021/acsami.0c04985
Publication status	Published - 15 Jul 2020

Keywords

MoSe
PbI
Raman and PL spectroscopy
type II band alignment
vdW heterostructure

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10.1021/acsami.0c04985

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Xiao, J., Zhang, L., Zhou, H., Shao, Z., Liu, J., Zhao, Y., Li, Y., Liu, X., Xie, H., Gao, Y., Sun, J. T., Wee, A. T. S., & Huang, H. (2020). Type-II Interface Band Alignment in the vdW PbI₂-MoSe₂Heterostructure. ACS Applied Materials and Interfaces, 12(28), 32099-32105. https://doi.org/10.1021/acsami.0c04985

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title = "Type-II Interface Band Alignment in the vdW PbI2-MoSe2Heterostructure",

abstract = "Energy band alignments at heterostructure interfaces play key roles in device performance, especially between two-dimensional atomically thin materials. Herein, van der Waals PbI2-MoSe2 heterostructures fabricated by in situ PbI2 deposition on monolayer MoSe2 are comprehensively studied using scanning tunneling microscopy/spectroscopy, atomic force microscopy, photoemission spectroscopy, and Raman and photoluminescence (PL) spectroscopy. PbI2 grows on MoSe2 in a quasi layer-by-layer epitaxial mode. A type-II interface band alignment is proposed between PbI2 and MoSe2 with the conduction band minimum (valence band maximum) located at PbI2 (MoSe2), which is confirmed by first-principles calculations and the existence of interfacial excitons revealed using temperature-dependent PL. Our findings provide a scalable method to fabricate PbI2-MoSe2 heterostructures and new insights into the electronic structures for future device design.",

keywords = "MoSe, PbI, Raman and PL spectroscopy, type II band alignment, vdW heterostructure",

author = "Junting Xiao and Lei Zhang and Hui Zhou and Ziyi Shao and Jinxin Liu and Yuan Zhao and Youzhen Li and Xiaoliang Liu and Haipeng Xie and Yongli Gao and Sun, {Jia Tao} and Wee, {Andrew T.S.} and Han Huang",

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year = "2020",

month = jul,

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doi = "10.1021/acsami.0c04985",

language = "English",

volume = "12",

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AU - Xiao, Junting

AU - Zhang, Lei

AU - Zhou, Hui

AU - Shao, Ziyi

AU - Liu, Jinxin

AU - Zhao, Yuan

AU - Li, Youzhen

AU - Liu, Xiaoliang

AU - Xie, Haipeng

AU - Gao, Yongli

AU - Sun, Jia Tao

AU - Wee, Andrew T.S.

AU - Huang, Han

PY - 2020/7/15

Y1 - 2020/7/15

N2 - Energy band alignments at heterostructure interfaces play key roles in device performance, especially between two-dimensional atomically thin materials. Herein, van der Waals PbI2-MoSe2 heterostructures fabricated by in situ PbI2 deposition on monolayer MoSe2 are comprehensively studied using scanning tunneling microscopy/spectroscopy, atomic force microscopy, photoemission spectroscopy, and Raman and photoluminescence (PL) spectroscopy. PbI2 grows on MoSe2 in a quasi layer-by-layer epitaxial mode. A type-II interface band alignment is proposed between PbI2 and MoSe2 with the conduction band minimum (valence band maximum) located at PbI2 (MoSe2), which is confirmed by first-principles calculations and the existence of interfacial excitons revealed using temperature-dependent PL. Our findings provide a scalable method to fabricate PbI2-MoSe2 heterostructures and new insights into the electronic structures for future device design.

AB - Energy band alignments at heterostructure interfaces play key roles in device performance, especially between two-dimensional atomically thin materials. Herein, van der Waals PbI2-MoSe2 heterostructures fabricated by in situ PbI2 deposition on monolayer MoSe2 are comprehensively studied using scanning tunneling microscopy/spectroscopy, atomic force microscopy, photoemission spectroscopy, and Raman and photoluminescence (PL) spectroscopy. PbI2 grows on MoSe2 in a quasi layer-by-layer epitaxial mode. A type-II interface band alignment is proposed between PbI2 and MoSe2 with the conduction band minimum (valence band maximum) located at PbI2 (MoSe2), which is confirmed by first-principles calculations and the existence of interfacial excitons revealed using temperature-dependent PL. Our findings provide a scalable method to fabricate PbI2-MoSe2 heterostructures and new insights into the electronic structures for future device design.

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KW - Raman and PL spectroscopy

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KW - vdW heterostructure

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Type-II Interface Band Alignment in the vdW PbI₂-MoSe₂Heterostructure

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