Two-dimensional topological insulator state and topological phase transition in bilayer graphene

Zhenhua Qiao*, Wang Kong Tse, Hua Jiang, Yugui Yao, Qian Niu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

163 Citations (Scopus)

Abstract

We show that gated bilayer graphene hosts a strong topological insulator (TI) phase in the presence of Rashba spin-orbit (SO) coupling. We find that gated bilayer graphene under preserved time-reversal symmetry is a quantum valley Hall insulator for small Rashba SO coupling λ R, and transitions to a strong TI when λ R>√U2+t2, where U and t are, respectively, the interlayer potential and tunneling energy. Different from a conventional quantum spin Hall state, the edge modes of our strong TI phase exhibit both spin and valley filtering, and thus share the properties of both quantum spin Hall and quantum valley Hall insulators. The strong TI phase remains robust in the presence of weak graphene intrinsic SO coupling.

Original languageEnglish
Article number256801
JournalPhysical Review Letters
Volume107
Issue number25
DOIs
Publication statusPublished - 14 Dec 2011

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