Twisted charge-density-wave patterns in bilayer 2D crystals and modulated electronic states

Yaoyao Chen, Liwei Liu*, Xuan Song, Han Yang, Zeping Huang, Teng Zhang, Huixia Yang, Hong Jun Gao, Yeliang Wang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)

Abstract

The twistronics of the atomic-thick two-dimensional (2D) van der Waals materials has opened a new venue to investigate the interlayer coupling. Till now, most studies focus on the twist of atomic lattices and the resulted moiré superstructures, while the reports about the twist of charge density waves (CDWs), the superstructures of which are from individual layers are limited. Here, using molecular beam epitaxy, we construct bilayer (BL) 1T-NbSe2 vertical structures. With high resolution scanning tunneling microscopy observations, we identify two cases of CDW twisted stacking with atomic precision. The typical twist angles are 0° and 60° between the 1st and the 2nd layer, although the top Se atomic lattices of these two layers are parallel. Compared to the single layer case, the dI/dV at BL shows an insulator-to-metal transition, with the Hubbard bands shrinking towards the Fermi level (E F). More intriguingly, interlayer coupling states rise near E F, which are related to the CDW twist angles. These findings give fresh insight into the engineering of 2D materials by CDW twisting and are potentially applicable for future nanoelectronic devices.

Original languageEnglish
Article number014007
Journal2D Materials
Volume9
Issue number1
DOIs
Publication statusPublished - Jan 2022

Keywords

  • NbSe
  • charge density wave
  • insulator-to-metal transition
  • scanning tunneling microscopy
  • twisted stacking

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