Tuning of resistive memory switching in electropolymerized metallopolymeric films

Bin Bin Cui; Zupan Mao; Yuxia Chen; Yu Wu Zhong; Gui Yu; Chuanlang Zhan; Jiannian Yao

doi:10.1039/c4sc03345k

Tuning of resistive memory switching in electropolymerized metallopolymeric films

Bin Bin Cui, Zupan Mao, Yuxia Chen, Yu Wu Zhong^*, Gui Yu, Chuanlang Zhan, Jiannian Yao

^*Corresponding author for this work

CAS - Institute of Chemistry

Research output: Contribution to journal › Article › peer-review

72 Citations (Scopus)

Abstract

A diruthenium complex capped with two triphenylamine units was polymerized by electrochemical oxidation to afford metallopolymeric films with alternating diruthenium and tetraphenylbenzidine structures. The obtained thin films feature rich redox processes associated with the reduction of the bridging ligands (tetra(pyrid-2-yl)pyrazine) and the oxidation of the tetraphenylbenzidine and diruthenium segments. The sandwiched ITO/polymer film/Al electrical devices show excellent resistive memory switching with a low operational voltage, large ON/OFF current ratio (100-1000), good stability (500 cycles tested), and long retention time. In stark contrast, devices with polymeric films of a related monoruthenium complex show poor memory performance. The mechanism of the field-induced conductivity of the diruthenium polymer film is rationalized by the formation of a charge transfer state, as supported by DFT calculations.

Original language	English
Pages (from-to)	1308-1315
Number of pages	8
Journal	Chemical Science
Volume	6
Issue number	2
DOIs	https://doi.org/10.1039/c4sc03345k
Publication status	Published - 1 Feb 2015
Externally published	Yes

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title = "Tuning of resistive memory switching in electropolymerized metallopolymeric films",

abstract = "A diruthenium complex capped with two triphenylamine units was polymerized by electrochemical oxidation to afford metallopolymeric films with alternating diruthenium and tetraphenylbenzidine structures. The obtained thin films feature rich redox processes associated with the reduction of the bridging ligands (tetra(pyrid-2-yl)pyrazine) and the oxidation of the tetraphenylbenzidine and diruthenium segments. The sandwiched ITO/polymer film/Al electrical devices show excellent resistive memory switching with a low operational voltage, large ON/OFF current ratio (100-1000), good stability (500 cycles tested), and long retention time. In stark contrast, devices with polymeric films of a related monoruthenium complex show poor memory performance. The mechanism of the field-induced conductivity of the diruthenium polymer film is rationalized by the formation of a charge transfer state, as supported by DFT calculations.",

author = "Cui, {Bin Bin} and Zupan Mao and Yuxia Chen and Zhong, {Yu Wu} and Gui Yu and Chuanlang Zhan and Jiannian Yao",

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T1 - Tuning of resistive memory switching in electropolymerized metallopolymeric films

AU - Cui, Bin Bin

AU - Mao, Zupan

AU - Chen, Yuxia

AU - Zhong, Yu Wu

AU - Yu, Gui

AU - Zhan, Chuanlang

AU - Yao, Jiannian

PY - 2015/2/1

Y1 - 2015/2/1

N2 - A diruthenium complex capped with two triphenylamine units was polymerized by electrochemical oxidation to afford metallopolymeric films with alternating diruthenium and tetraphenylbenzidine structures. The obtained thin films feature rich redox processes associated with the reduction of the bridging ligands (tetra(pyrid-2-yl)pyrazine) and the oxidation of the tetraphenylbenzidine and diruthenium segments. The sandwiched ITO/polymer film/Al electrical devices show excellent resistive memory switching with a low operational voltage, large ON/OFF current ratio (100-1000), good stability (500 cycles tested), and long retention time. In stark contrast, devices with polymeric films of a related monoruthenium complex show poor memory performance. The mechanism of the field-induced conductivity of the diruthenium polymer film is rationalized by the formation of a charge transfer state, as supported by DFT calculations.

AB - A diruthenium complex capped with two triphenylamine units was polymerized by electrochemical oxidation to afford metallopolymeric films with alternating diruthenium and tetraphenylbenzidine structures. The obtained thin films feature rich redox processes associated with the reduction of the bridging ligands (tetra(pyrid-2-yl)pyrazine) and the oxidation of the tetraphenylbenzidine and diruthenium segments. The sandwiched ITO/polymer film/Al electrical devices show excellent resistive memory switching with a low operational voltage, large ON/OFF current ratio (100-1000), good stability (500 cycles tested), and long retention time. In stark contrast, devices with polymeric films of a related monoruthenium complex show poor memory performance. The mechanism of the field-induced conductivity of the diruthenium polymer film is rationalized by the formation of a charge transfer state, as supported by DFT calculations.

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VL - 6

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JO - Chemical Science

JF - Chemical Science

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ER -

Tuning of resistive memory switching in electropolymerized metallopolymeric films

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