Abstract
Graphene-based strain sensors have attracted much attention recently. Usually, there is a trade-off between the sensitivity and resistance of such devices, while larger resistance devices have higher energy consumption. In this paper, we report a tuning of both sensitivity and resistance of graphene strain sensing devices by tailoring graphene nanostructures. For a typical piezoresistive nanographene film with a sheet resistance of ∼100 KΩ/â-¡, a gauge factor of more than 600 can be achieved, which is 50× larger than those in previous studies. These films with high sensitivity and low resistivity were also transferred on flexible substrates for device integration for force mapping. Each device shows a high gauge factor of more than 500, a long lifetime of more than 104 cycles, and a fast response time of less than 4 ms, suggesting a great potential in electronic skin applications.
Original language | English |
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Pages (from-to) | 1622-1629 |
Number of pages | 8 |
Journal | ACS Nano |
Volume | 9 |
Issue number | 2 |
DOIs | |
Publication status | Published - 24 Feb 2015 |
Externally published | Yes |
Keywords
- artificial electronic skin
- controllable size
- graphene
- tunneling effect
- ultrasensitivity