Tunable emission and conductivity enhancement by tellurium doping in CdS nanowires for optoelectronic applications

Muhammad Arshad Kamran; Ghulam Nabi; Abdul Majid; Muhammad Waqas Iqbal; Thamer Alharbi; Yongyou Zhang; Bingsuo Zou

doi:10.1016/j.physe.2016.10.009

Tunable emission and conductivity enhancement by tellurium doping in CdS nanowires for optoelectronic applications

Muhammad Arshad Kamran^*, Ghulam Nabi, Abdul Majid, Muhammad Waqas Iqbal, Thamer Alharbi, Yongyou Zhang, Bingsuo Zou

^*Corresponding author for this work

School of Physics

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Improvement of the optical and electrical characteristics is essential to get advanced performance from one dimensional (1D) material. Here, we report the first synthesis of a single crystalline Te-doped CdS nanowires (NWs) by a chemical-vapor-deposition (CVD) method. Room temperature photoluminescence (PL) spectra showed that Te concentration plays an important role in tuning emission color from orange to infrared (IR). Decrease in bandgap and PL intensity with increase in Te concentration was observed as compared to undoped CdS NWs. Red and IR emissions were found at 736.5 and 881 nm for doping concentration >6.06%. To our best knowledge, IR emission band has been observed for the first time in CdS NWs. Red-shift of LO phonon mode and its overtone in Raman spectra, and lifetime of red and IR emissions are longer than bandgap of host indicating the doping effect of CdS NWs. Energy-dispersive X-ray spectroscopy (EDS) and X-ray diffraction (XRD) of the Te-doped CdS NWs further confirms the presence of Te in the CdS NWs. Output characteristics confirm enhanced output current I_ds with the increase in doping concentration. A possible growth mechanism was proposed. Doping technique offers to develop high-quality, a very stable, effective, and easily-applicable way to enhance the performance of one dimensional optoelectronic devices and solar cell applications.

Original language	English
Pages (from-to)	81-87
Number of pages	7
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	86
DOIs	https://doi.org/10.1016/j.physe.2016.10.009
Publication status	Published - 1 Feb 2017

Keywords

CVD
Cadmium sulfide
Nanowires
Photoluminescence
Tellurium

Access to Document

10.1016/j.physe.2016.10.009

Cite this

@article{54d537ce4f5f4c05856cd8cc7e0cee97,

title = "Tunable emission and conductivity enhancement by tellurium doping in CdS nanowires for optoelectronic applications",

abstract = "Improvement of the optical and electrical characteristics is essential to get advanced performance from one dimensional (1D) material. Here, we report the first synthesis of a single crystalline Te-doped CdS nanowires (NWs) by a chemical-vapor-deposition (CVD) method. Room temperature photoluminescence (PL) spectra showed that Te concentration plays an important role in tuning emission color from orange to infrared (IR). Decrease in bandgap and PL intensity with increase in Te concentration was observed as compared to undoped CdS NWs. Red and IR emissions were found at 736.5 and 881 nm for doping concentration >6.06%. To our best knowledge, IR emission band has been observed for the first time in CdS NWs. Red-shift of LO phonon mode and its overtone in Raman spectra, and lifetime of red and IR emissions are longer than bandgap of host indicating the doping effect of CdS NWs. Energy-dispersive X-ray spectroscopy (EDS) and X-ray diffraction (XRD) of the Te-doped CdS NWs further confirms the presence of Te in the CdS NWs. Output characteristics confirm enhanced output current Ids with the increase in doping concentration. A possible growth mechanism was proposed. Doping technique offers to develop high-quality, a very stable, effective, and easily-applicable way to enhance the performance of one dimensional optoelectronic devices and solar cell applications.",

keywords = "CVD, Cadmium sulfide, Nanowires, Photoluminescence, Tellurium",

author = "Kamran, {Muhammad Arshad} and Ghulam Nabi and Abdul Majid and Iqbal, {Muhammad Waqas} and Thamer Alharbi and Yongyou Zhang and Bingsuo Zou",

note = "Publisher Copyright: {\textcopyright} 2016 Elsevier B.V.",

year = "2017",

month = feb,

day = "1",

doi = "10.1016/j.physe.2016.10.009",

language = "English",

volume = "86",

pages = "81--87",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Tunable emission and conductivity enhancement by tellurium doping in CdS nanowires for optoelectronic applications

AU - Kamran, Muhammad Arshad

AU - Nabi, Ghulam

AU - Majid, Abdul

AU - Iqbal, Muhammad Waqas

AU - Alharbi, Thamer

AU - Zhang, Yongyou

AU - Zou, Bingsuo

PY - 2017/2/1

Y1 - 2017/2/1

N2 - Improvement of the optical and electrical characteristics is essential to get advanced performance from one dimensional (1D) material. Here, we report the first synthesis of a single crystalline Te-doped CdS nanowires (NWs) by a chemical-vapor-deposition (CVD) method. Room temperature photoluminescence (PL) spectra showed that Te concentration plays an important role in tuning emission color from orange to infrared (IR). Decrease in bandgap and PL intensity with increase in Te concentration was observed as compared to undoped CdS NWs. Red and IR emissions were found at 736.5 and 881 nm for doping concentration >6.06%. To our best knowledge, IR emission band has been observed for the first time in CdS NWs. Red-shift of LO phonon mode and its overtone in Raman spectra, and lifetime of red and IR emissions are longer than bandgap of host indicating the doping effect of CdS NWs. Energy-dispersive X-ray spectroscopy (EDS) and X-ray diffraction (XRD) of the Te-doped CdS NWs further confirms the presence of Te in the CdS NWs. Output characteristics confirm enhanced output current Ids with the increase in doping concentration. A possible growth mechanism was proposed. Doping technique offers to develop high-quality, a very stable, effective, and easily-applicable way to enhance the performance of one dimensional optoelectronic devices and solar cell applications.

AB - Improvement of the optical and electrical characteristics is essential to get advanced performance from one dimensional (1D) material. Here, we report the first synthesis of a single crystalline Te-doped CdS nanowires (NWs) by a chemical-vapor-deposition (CVD) method. Room temperature photoluminescence (PL) spectra showed that Te concentration plays an important role in tuning emission color from orange to infrared (IR). Decrease in bandgap and PL intensity with increase in Te concentration was observed as compared to undoped CdS NWs. Red and IR emissions were found at 736.5 and 881 nm for doping concentration >6.06%. To our best knowledge, IR emission band has been observed for the first time in CdS NWs. Red-shift of LO phonon mode and its overtone in Raman spectra, and lifetime of red and IR emissions are longer than bandgap of host indicating the doping effect of CdS NWs. Energy-dispersive X-ray spectroscopy (EDS) and X-ray diffraction (XRD) of the Te-doped CdS NWs further confirms the presence of Te in the CdS NWs. Output characteristics confirm enhanced output current Ids with the increase in doping concentration. A possible growth mechanism was proposed. Doping technique offers to develop high-quality, a very stable, effective, and easily-applicable way to enhance the performance of one dimensional optoelectronic devices and solar cell applications.

KW - CVD

KW - Cadmium sulfide

KW - Nanowires

KW - Photoluminescence

KW - Tellurium

UR - http://www.scopus.com/inward/record.url?scp=84991666913&partnerID=8YFLogxK

U2 - 10.1016/j.physe.2016.10.009

DO - 10.1016/j.physe.2016.10.009

M3 - Article

AN - SCOPUS:84991666913

SN - 1386-9477

VL - 86

SP - 81

EP - 87

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

ER -

Tunable emission and conductivity enhancement by tellurium doping in CdS nanowires for optoelectronic applications

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this