Quhe, R., Fei, R., Liu, Q., Zheng, J., Li, H., Xu, C., Ni, Z., Wang, Y., Yu, D., Gao, Z., & Lu, J. (2012). Tunable and sizable band gap in silicene by surface adsorption. Scientific Reports, 2, Article 853. https://doi.org/10.1038/srep00853
Quhe, Ruge ; Fei, Ruixiang ; Liu, Qihang et al. / Tunable and sizable band gap in silicene by surface adsorption. In: Scientific Reports. 2012 ; Vol. 2.
@article{121e8822ccf24929a5211d7416b7c059,
title = "Tunable and sizable band gap in silicene by surface adsorption",
abstract = "Opening a sizable band gap without degrading its high carrier mobility is as vital for silicene as for graphene to its application as a high-performance field effect transistor (FET). Our density functional theory calculations predict that a band gap is opened in silicene by single-side adsorption of alkali atom as a result of sublattice or bond symmetry breaking. The band gap size is controllable by changing the adsorption coverage, with an impressive maximum band gap up to 0.50 eV. The ab initio quantum transport simulation of a bottom-gated FET based on a sodium-covered silicene reveals a transport gap, which is consistent with the band gap, and the resulting on/off current ratio is up to 10 8. Therefore, a way is paved for silicene as the channel of a high-performance FET.",
author = "Ruge Quhe and Ruixiang Fei and Qihang Liu and Jiaxin Zheng and Hong Li and Chengyong Xu and Zeyuan Ni and Yangyang Wang and Dapeng Yu and Zhengxiang Gao and Jing Lu",
year = "2012",
doi = "10.1038/srep00853",
language = "English",
volume = "2",
journal = "Scientific Reports",
issn = "2045-2322",
publisher = "Nature Publishing Group",
}
Quhe, R, Fei, R, Liu, Q, Zheng, J, Li, H, Xu, C, Ni, Z, Wang, Y, Yu, D, Gao, Z & Lu, J 2012, 'Tunable and sizable band gap in silicene by surface adsorption', Scientific Reports, vol. 2, 853. https://doi.org/10.1038/srep00853
Tunable and sizable band gap in silicene by surface adsorption. / Quhe, Ruge
; Fei, Ruixiang; Liu, Qihang et al.
In:
Scientific Reports, Vol. 2, 853, 2012.
Research output: Contribution to journal › Article › peer-review
TY - JOUR
T1 - Tunable and sizable band gap in silicene by surface adsorption
AU - Quhe, Ruge
AU - Fei, Ruixiang
AU - Liu, Qihang
AU - Zheng, Jiaxin
AU - Li, Hong
AU - Xu, Chengyong
AU - Ni, Zeyuan
AU - Wang, Yangyang
AU - Yu, Dapeng
AU - Gao, Zhengxiang
AU - Lu, Jing
PY - 2012
Y1 - 2012
N2 - Opening a sizable band gap without degrading its high carrier mobility is as vital for silicene as for graphene to its application as a high-performance field effect transistor (FET). Our density functional theory calculations predict that a band gap is opened in silicene by single-side adsorption of alkali atom as a result of sublattice or bond symmetry breaking. The band gap size is controllable by changing the adsorption coverage, with an impressive maximum band gap up to 0.50 eV. The ab initio quantum transport simulation of a bottom-gated FET based on a sodium-covered silicene reveals a transport gap, which is consistent with the band gap, and the resulting on/off current ratio is up to 10 8. Therefore, a way is paved for silicene as the channel of a high-performance FET.
AB - Opening a sizable band gap without degrading its high carrier mobility is as vital for silicene as for graphene to its application as a high-performance field effect transistor (FET). Our density functional theory calculations predict that a band gap is opened in silicene by single-side adsorption of alkali atom as a result of sublattice or bond symmetry breaking. The band gap size is controllable by changing the adsorption coverage, with an impressive maximum band gap up to 0.50 eV. The ab initio quantum transport simulation of a bottom-gated FET based on a sodium-covered silicene reveals a transport gap, which is consistent with the band gap, and the resulting on/off current ratio is up to 10 8. Therefore, a way is paved for silicene as the channel of a high-performance FET.
UR - http://www.scopus.com/inward/record.url?scp=84870838654&partnerID=8YFLogxK
U2 - 10.1038/srep00853
DO - 10.1038/srep00853
M3 - Article
AN - SCOPUS:84870838654
SN - 2045-2322
VL - 2
JO - Scientific Reports
JF - Scientific Reports
M1 - 853
ER -
Quhe R, Fei R, Liu Q, Zheng J, Li H, Xu C et al. Tunable and sizable band gap in silicene by surface adsorption. Scientific Reports. 2012;2:853. doi: 10.1038/srep00853
