TY - JOUR
T1 - Transport properties and high thermopower of SnSe2
T2 - A full ab-initio investigation
AU - Ding, Yingchun
AU - Xiao, Bing
AU - Tang, Gang
AU - Hong, Jiawang
N1 - Publisher Copyright:
© 2016 American Chemical Society.
PY - 2017/1/12
Y1 - 2017/1/12
N2 - Motivated by the observation that many known layered chalcogenides show promising thermoelectric properties, we investigate the similar properties of SnSe2 by solving the Boltzmann transport equation for both lattice and electron. A selfconsistent single parabolic band model (SPB) is employed to compute the electron relaxation time rigorously. The obtained intrinsic lattice thermal conductivities in a and c directions are 6.78 and 0.79 W/m·K at 300 K. The results show that acoustic phonon branches play the dominant role in heat transport. Thermoelectric properties of n-type SnSe2 are found to be significantly better than those of p-type doping for temperatures between 200 and 800 K and carrier concentrations between 1017 and 1020 cm-3. At n = 1020 cm-3 and 300 K, we find σa = 4.97 × 105 Ω-1·m-1 and σc = 3.39 × 104 Ω-1·m-1 and the ratio σa/σc = 14.67 for n-type SnSe2. Both electrical and lattice thermal conductivities show a strong anisotropic feature. A high thermoelectric figure of merit is revealed in n-type SnSe2 (ZTa = 2.95 and ZTc = 0.68 at n = 1020 cm-3 and 800 K). The large ZT value indicates that SnSe2 is a promising candidate for thermoelectric applications.
AB - Motivated by the observation that many known layered chalcogenides show promising thermoelectric properties, we investigate the similar properties of SnSe2 by solving the Boltzmann transport equation for both lattice and electron. A selfconsistent single parabolic band model (SPB) is employed to compute the electron relaxation time rigorously. The obtained intrinsic lattice thermal conductivities in a and c directions are 6.78 and 0.79 W/m·K at 300 K. The results show that acoustic phonon branches play the dominant role in heat transport. Thermoelectric properties of n-type SnSe2 are found to be significantly better than those of p-type doping for temperatures between 200 and 800 K and carrier concentrations between 1017 and 1020 cm-3. At n = 1020 cm-3 and 300 K, we find σa = 4.97 × 105 Ω-1·m-1 and σc = 3.39 × 104 Ω-1·m-1 and the ratio σa/σc = 14.67 for n-type SnSe2. Both electrical and lattice thermal conductivities show a strong anisotropic feature. A high thermoelectric figure of merit is revealed in n-type SnSe2 (ZTa = 2.95 and ZTc = 0.68 at n = 1020 cm-3 and 800 K). The large ZT value indicates that SnSe2 is a promising candidate for thermoelectric applications.
UR - http://www.scopus.com/inward/record.url?scp=85014462883&partnerID=8YFLogxK
U2 - 10.1021/acs.jpcc.6b11467
DO - 10.1021/acs.jpcc.6b11467
M3 - Article
AN - SCOPUS:85014462883
SN - 1932-7447
VL - 121
SP - 225
EP - 236
JO - Journal of Physical Chemistry C
JF - Journal of Physical Chemistry C
IS - 1
ER -