TY - JOUR
T1 - Transition metal silicide nanowires growth and electrical characterization
AU - Peng, Zu Lin
AU - Liang, S.
AU - Deng, Luo Gen
PY - 2009
Y1 - 2009
N2 - We report the characterization of self-assembled epitaxially grown transition metal, Fe, Co, Ni, silicide nanowires (TM-NW) growth and electrical transport properties. NWs grown by reactive deposition epitaxy on various silicon surfaces show a dimension of 10 nm by 5 nm, and several micrometers in length. NW orientations strongly depend on substrate crystal orientation, and follow the substrate symmetry. By using conductive-AFM (c-AFM), the electron transport properties of one single NW were measured, the resistivity of crystalline nickel silicide NW was estimated to be 2 × 10-2 Ωcm.
AB - We report the characterization of self-assembled epitaxially grown transition metal, Fe, Co, Ni, silicide nanowires (TM-NW) growth and electrical transport properties. NWs grown by reactive deposition epitaxy on various silicon surfaces show a dimension of 10 nm by 5 nm, and several micrometers in length. NW orientations strongly depend on substrate crystal orientation, and follow the substrate symmetry. By using conductive-AFM (c-AFM), the electron transport properties of one single NW were measured, the resistivity of crystalline nickel silicide NW was estimated to be 2 × 10-2 Ωcm.
UR - http://www.scopus.com/inward/record.url?scp=73949102394&partnerID=8YFLogxK
U2 - 10.1088/0256-307X/26/12/127301
DO - 10.1088/0256-307X/26/12/127301
M3 - Article
AN - SCOPUS:73949102394
SN - 0256-307X
VL - 26
JO - Chinese Physics Letters
JF - Chinese Physics Letters
IS - 12
M1 - 127301
ER -