Topoelectrical circuit octupole insulator with topologically protected corner states

Jiacheng Bao, Deyuan Zou, Weixuan Zhang, Wenjing He, Houjun Sun*, Xiangdong Zhang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

109 Citations (Scopus)

Abstract

Recent theoretical studies have extended the Berry phase framework to account for higher electric multipole moments; quadrupole and octupole topological phases have been proposed. Although the two-dimensional quantized quadrupole insulators have been demonstrated experimentally, octupole topological phases have not previously been observed experimentally. Here we report on the experimental realization of a classical analog of the octupole topological insulator in the electric circuit system. Three-dimensional topolectrical circuits for realizing such topological phases are constructed experimentally. We observe octupole topological states protected by the topology of the bulk, which are localized at the corners. Our results provide conclusive evidence of a form of robustness against disorder and deformation, which is characteristic of octupole topological insulators. Our study opens a route toward higher-order topological phenomena in three dimensions and paves the way for employing topolectrical circuitry to study complex topological phenomena.

Original languageEnglish
Article number201406
JournalPhysical Review B
Volume100
Issue number20
DOIs
Publication statusPublished - 25 Nov 2019

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