Thermodynamic calculations of ZrC-SiC system for chemical vapor deposition applications from SiCl4-ZrCl4-CH4-H2

Qiaomu Liu*, Litong Zhang, Yiguang Wang, Laifei Cheng

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Citations (Scopus)

Abstract

Thermodynamic equilibrium condensed phases for chemical vapor deposition of ZrC-SiC ternary system from SiCl4-ZrCl4-CH 4-H2 were calculated by Gibbs free energy minimization method. The effects of partial pressure of reactants, temperatures, total pressures, and carbon sources on the final condensed phases were demonstrated. It was found that the CH4 partial pressure is the controlling parameter of SiCl4-ZrCl4-CH4-H2 system. Reasonable reactant concentration ranges, temperatures and pressures for ZrC-SiC system were established according to these deposition phase diagrams. Compared with CH4, lower temperature is required to decompose C 3HD due to its lower chemical stability.

Original languageEnglish
Title of host publicationDesign, Development, and Applications of Engineering Ceramics and Composites - A Collection of Papers Presented at the 8th Pacific Rim Conference on Ceramic and Glass Technology, PACRIM 8
PublisherAmerican Ceramic Society
Pages65-75
Number of pages11
ISBN (Print)9780470889367
DOIs
Publication statusPublished - 2010
Externally publishedYes
Event8th Pacific Rim Conference on Ceramic and Glass Technology, PACRIM-8 - Vancouver, BC, Canada
Duration: 31 May 20095 Jun 2009

Publication series

NameCeramic Transactions
Volume215
ISSN (Print)1042-1122

Conference

Conference8th Pacific Rim Conference on Ceramic and Glass Technology, PACRIM-8
Country/TerritoryCanada
CityVancouver, BC
Period31/05/095/06/09

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