Bao, Z., Liu, B., Liu, X., Zhang, S., Weng, L., Sun, H., Zhang, X., Yao, Q., Yuan, G., Guo, J., Ning, C., Shi, D., Wang, F., & Yu, Z. (2024). The stability analysis of In-Ga-ZnO thin film transistors with polyimide substrates based on Maxwell-Wagner effect. Applied Physics Letters, 124(16), Article 163501. https://doi.org/10.1063/5.0196413
Bao, Zongchi ; Liu, Bin ; Liu, Xianwen et al. / The stability analysis of In-Ga-ZnO thin film transistors with polyimide substrates based on Maxwell-Wagner effect. In: Applied Physics Letters. 2024 ; Vol. 124, No. 16.
@article{dddf322501d140adb5472810bae017f5,
title = "The stability analysis of In-Ga-ZnO thin film transistors with polyimide substrates based on Maxwell-Wagner effect",
abstract = "Flexible organic light-emitting diode display devices fabricated on polyimide (PI) substrates have more obvious residual image problems due to the abnormal threshold-voltage (Vth) shifts of a thin film transistor (TFT). In this paper, the Vth shift of TFT fabricated on a PI substrate was analyzed. We explained the worse bias stability and worse recovery of TFT with a PI substrate compared with TFT with a glass substrate, by an interlayer charging effect (Maxwell-Wagner effect) and a technology computer-aided design (Silvaco). When bias stress was applied for a long time, the interface between the PI substrate and the buffer layer will have a charging effect under the action of an electric field, and the charging charge will react on the channel and hinder the formation of the channel. We found that there are differences in the scale of charge under different voltage stress conditions, and this will result in different Vth shifts of driving TFTs for displays units.",
author = "Zongchi Bao and Bin Liu and Xianwen Liu and Shuo Zhang and Le Weng and Haoran Sun and Xi Zhang and Qi Yao and Guangcai Yuan and Jian Guo and Ce Ning and Dawei Shi and Feng Wang and Zhinong Yu",
note = "Publisher Copyright: {\textcopyright} 2024 Author(s).",
year = "2024",
month = apr,
day = "15",
doi = "10.1063/5.0196413",
language = "English",
volume = "124",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "16",
}
Bao, Z, Liu, B, Liu, X, Zhang, S, Weng, L, Sun, H, Zhang, X, Yao, Q, Yuan, G, Guo, J, Ning, C, Shi, D, Wang, F & Yu, Z 2024, 'The stability analysis of In-Ga-ZnO thin film transistors with polyimide substrates based on Maxwell-Wagner effect', Applied Physics Letters, vol. 124, no. 16, 163501. https://doi.org/10.1063/5.0196413
The stability analysis of In-Ga-ZnO thin film transistors with polyimide substrates based on Maxwell-Wagner effect. / Bao, Zongchi; Liu, Bin
; Liu, Xianwen et al.
In:
Applied Physics Letters, Vol. 124, No. 16, 163501, 15.04.2024.
Research output: Contribution to journal › Article › peer-review
TY - JOUR
T1 - The stability analysis of In-Ga-ZnO thin film transistors with polyimide substrates based on Maxwell-Wagner effect
AU - Bao, Zongchi
AU - Liu, Bin
AU - Liu, Xianwen
AU - Zhang, Shuo
AU - Weng, Le
AU - Sun, Haoran
AU - Zhang, Xi
AU - Yao, Qi
AU - Yuan, Guangcai
AU - Guo, Jian
AU - Ning, Ce
AU - Shi, Dawei
AU - Wang, Feng
AU - Yu, Zhinong
N1 - Publisher Copyright:
© 2024 Author(s).
PY - 2024/4/15
Y1 - 2024/4/15
N2 - Flexible organic light-emitting diode display devices fabricated on polyimide (PI) substrates have more obvious residual image problems due to the abnormal threshold-voltage (Vth) shifts of a thin film transistor (TFT). In this paper, the Vth shift of TFT fabricated on a PI substrate was analyzed. We explained the worse bias stability and worse recovery of TFT with a PI substrate compared with TFT with a glass substrate, by an interlayer charging effect (Maxwell-Wagner effect) and a technology computer-aided design (Silvaco). When bias stress was applied for a long time, the interface between the PI substrate and the buffer layer will have a charging effect under the action of an electric field, and the charging charge will react on the channel and hinder the formation of the channel. We found that there are differences in the scale of charge under different voltage stress conditions, and this will result in different Vth shifts of driving TFTs for displays units.
AB - Flexible organic light-emitting diode display devices fabricated on polyimide (PI) substrates have more obvious residual image problems due to the abnormal threshold-voltage (Vth) shifts of a thin film transistor (TFT). In this paper, the Vth shift of TFT fabricated on a PI substrate was analyzed. We explained the worse bias stability and worse recovery of TFT with a PI substrate compared with TFT with a glass substrate, by an interlayer charging effect (Maxwell-Wagner effect) and a technology computer-aided design (Silvaco). When bias stress was applied for a long time, the interface between the PI substrate and the buffer layer will have a charging effect under the action of an electric field, and the charging charge will react on the channel and hinder the formation of the channel. We found that there are differences in the scale of charge under different voltage stress conditions, and this will result in different Vth shifts of driving TFTs for displays units.
UR - http://www.scopus.com/inward/record.url?scp=85190796995&partnerID=8YFLogxK
U2 - 10.1063/5.0196413
DO - 10.1063/5.0196413
M3 - Article
AN - SCOPUS:85190796995
SN - 0003-6951
VL - 124
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 16
M1 - 163501
ER -
Bao Z, Liu B, Liu X, Zhang S, Weng L, Sun H et al. The stability analysis of In-Ga-ZnO thin film transistors with polyimide substrates based on Maxwell-Wagner effect. Applied Physics Letters. 2024 Apr 15;124(16):163501. doi: 10.1063/5.0196413