TY - JOUR
T1 - The semi-conductor of ZnO deposited in reactive HiPIMS
AU - Wang, Zhengduo
AU - Li, Qian
AU - Yuan, Yan
AU - Yang, Lizhen
AU - Zhang, Haibao
AU - Liu, Zhongwei
AU - Ouyang, Jiting
AU - Chen, Q.
N1 - Publisher Copyright:
© 2019 Elsevier B.V.
PY - 2019/11/15
Y1 - 2019/11/15
N2 - In this paper we report the semi-conductor of zinc oxide (ZnO) thin film deposited by reactive high power impulse magnetron sputtering (R-HiPIMS) on glass substrates without external heating. We focus on the influence of deposition parameter, the ratio of O2/Ar exactly, on the crystalline and electrical properties of ZnO films. It is found that n-type ZnO film with a high carrier concentration can be grown through HiPIMS technique, the ratio of O2/Ar remarkably affects the ZnO crystalline and electrical properties. At O2/Ar = 14/80 sccm, the ZnO film was orientated at c-axis (002) plane. Based on the temporal resolution optical emission spectroscopy (OES), for the proposal of the correlation of film structure with plasma radicals and the reaction process in ZnO growth, the components in plasma are diagnosed. It is concluded that in a higher oxygen partial pressure, owing to the high ionization rate in HiPIMS, the oxide layer formed between pulses is removed, the growth of a new oxide layer during the pulse is hindered, hence the growth rate is increased, and the carrier concentration caused from point defects in ZnO film is high.
AB - In this paper we report the semi-conductor of zinc oxide (ZnO) thin film deposited by reactive high power impulse magnetron sputtering (R-HiPIMS) on glass substrates without external heating. We focus on the influence of deposition parameter, the ratio of O2/Ar exactly, on the crystalline and electrical properties of ZnO films. It is found that n-type ZnO film with a high carrier concentration can be grown through HiPIMS technique, the ratio of O2/Ar remarkably affects the ZnO crystalline and electrical properties. At O2/Ar = 14/80 sccm, the ZnO film was orientated at c-axis (002) plane. Based on the temporal resolution optical emission spectroscopy (OES), for the proposal of the correlation of film structure with plasma radicals and the reaction process in ZnO growth, the components in plasma are diagnosed. It is concluded that in a higher oxygen partial pressure, owing to the high ionization rate in HiPIMS, the oxide layer formed between pulses is removed, the growth of a new oxide layer during the pulse is hindered, hence the growth rate is increased, and the carrier concentration caused from point defects in ZnO film is high.
KW - Crystal and properties
KW - HiPIMS
KW - O/Ar ratio
KW - OES
KW - ZnO
UR - http://www.scopus.com/inward/record.url?scp=85069809917&partnerID=8YFLogxK
U2 - 10.1016/j.apsusc.2019.07.154
DO - 10.1016/j.apsusc.2019.07.154
M3 - Article
AN - SCOPUS:85069809917
SN - 0169-4332
VL - 494
SP - 384
EP - 390
JO - Applied Surface Science
JF - Applied Surface Science
ER -