TY - GEN
T1 - The Effect of Micro Discharge on the Time Characteristics of Surface Charge Accumulation in DC-GIL
AU - Gao, Yiping
AU - Wang, Qiang
AU - Hao, Liucheng
AU - Zhao, Junping
N1 - Publisher Copyright:
© 2020 IEEE.
PY - 2020/11/6
Y1 - 2020/11/6
N2 - In the DC GIL, the accumulation of surface charges could cause electric field distortion and thus even cause the flashover. In the numerical simulation of surface charge accumulation, only the charge carriers generated by natural ionization are considered in some of the studies. But in fact, during the operation of DC GIL, due to the rough surface of the insulator and other reasons, weak discharges always exist. These weak discharges are called micro discharges. In this paper, the micro discharge on the surface of the insulator is modeled, and the influence of the micro discharge on the surface charge accumulation time characteristics of the DC basin insulator is studied. The simulation results show that the existence of micro discharge will shorten the time constant for surface charge accumulation.
AB - In the DC GIL, the accumulation of surface charges could cause electric field distortion and thus even cause the flashover. In the numerical simulation of surface charge accumulation, only the charge carriers generated by natural ionization are considered in some of the studies. But in fact, during the operation of DC GIL, due to the rough surface of the insulator and other reasons, weak discharges always exist. These weak discharges are called micro discharges. In this paper, the micro discharge on the surface of the insulator is modeled, and the influence of the micro discharge on the surface charge accumulation time characteristics of the DC basin insulator is studied. The simulation results show that the existence of micro discharge will shorten the time constant for surface charge accumulation.
KW - DC-GIL
KW - micro discharge
KW - surface charge accumulation
KW - time characteristic
UR - http://www.scopus.com/inward/record.url?scp=85099465192&partnerID=8YFLogxK
U2 - 10.1109/HVDC50696.2020.9292670
DO - 10.1109/HVDC50696.2020.9292670
M3 - Conference contribution
AN - SCOPUS:85099465192
T3 - 2020 4th International Conference on HVDC, HVDC 2020
SP - 1125
EP - 1128
BT - 2020 4th International Conference on HVDC, HVDC 2020
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 4th International Conference on HVDC, HVDC 2020
Y2 - 6 November 2020 through 9 November 2020
ER -