The distribution of electromagnetic field in plasma

Liu Ye; Ren Wu; Xue Zhenghui; Li Weiming

doi:10.1109/ICMTCE.2013.6812402

The distribution of electromagnetic field in plasma

Liu Ye, Ren Wu, Xue Zhenghui, Li Weiming

Beijing Institute of Technology

Research output: Contribution to conference › Paper › peer-review

Abstract

Low temperature plasma technology as a special processing method has been used very widely in semiconductor technology, but when process the wafer which diameter is larger than 300mm, the uniformity of semiconductor wafer will become worse, and then the productivity gets lower. These bad results all attribute to one key reason that the plasma excited by the feeding VHF power does not generate a uniform distribution. In order to solve this problem, this research uses the time domain analysis methed to investigate the electromagnetic interaction in plasma by CST simulation. It is found that the uniformity strongly depends on how to feed the VHF power, including the position, the number and the shaped electrode. At the same time, investigating the interaction mechanism can also help finding the distribution and the uniformity of plasma.

Original language	English
Pages	115-118
Number of pages	4
DOIs	https://doi.org/10.1109/ICMTCE.2013.6812402
Publication status	Published - 2013
Event	2013 3rd IEEE International Conference on Microwave Technology and Computational Electromagnetics, ICMTCE 2013 - Qingdao, China Duration: 27 Aug 2013 → 29 Aug 2013

Conference

Conference	2013 3rd IEEE International Conference on Microwave Technology and Computational Electromagnetics, ICMTCE 2013
Country/Territory	China
City	Qingdao
Period	27/08/13 → 29/08/13

Keywords

Distribution of electromagnetic
feeding power
plasma

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10.1109/ICMTCE.2013.6812402

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abstract = "Low temperature plasma technology as a special processing method has been used very widely in semiconductor technology, but when process the wafer which diameter is larger than 300mm, the uniformity of semiconductor wafer will become worse, and then the productivity gets lower. These bad results all attribute to one key reason that the plasma excited by the feeding VHF power does not generate a uniform distribution. In order to solve this problem, this research uses the time domain analysis methed to investigate the electromagnetic interaction in plasma by CST simulation. It is found that the uniformity strongly depends on how to feed the VHF power, including the position, the number and the shaped electrode. At the same time, investigating the interaction mechanism can also help finding the distribution and the uniformity of plasma.",

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AU - Ye, Liu

AU - Wu, Ren

AU - Zhenghui, Xue

AU - Weiming, Li

PY - 2013

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N2 - Low temperature plasma technology as a special processing method has been used very widely in semiconductor technology, but when process the wafer which diameter is larger than 300mm, the uniformity of semiconductor wafer will become worse, and then the productivity gets lower. These bad results all attribute to one key reason that the plasma excited by the feeding VHF power does not generate a uniform distribution. In order to solve this problem, this research uses the time domain analysis methed to investigate the electromagnetic interaction in plasma by CST simulation. It is found that the uniformity strongly depends on how to feed the VHF power, including the position, the number and the shaped electrode. At the same time, investigating the interaction mechanism can also help finding the distribution and the uniformity of plasma.

AB - Low temperature plasma technology as a special processing method has been used very widely in semiconductor technology, but when process the wafer which diameter is larger than 300mm, the uniformity of semiconductor wafer will become worse, and then the productivity gets lower. These bad results all attribute to one key reason that the plasma excited by the feeding VHF power does not generate a uniform distribution. In order to solve this problem, this research uses the time domain analysis methed to investigate the electromagnetic interaction in plasma by CST simulation. It is found that the uniformity strongly depends on how to feed the VHF power, including the position, the number and the shaped electrode. At the same time, investigating the interaction mechanism can also help finding the distribution and the uniformity of plasma.

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T2 - 2013 3rd IEEE International Conference on Microwave Technology and Computational Electromagnetics, ICMTCE 2013

Y2 - 27 August 2013 through 29 August 2013

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The distribution of electromagnetic field in plasma

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Keywords

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