The distribution measurement of the photo-induced plasma in semiconductor by near-field scanning microwave microscopy

Liao Ma, Ning Leng, Xiu Zhu Ye, Ming Jin, Ming Bai

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

7 Citations (Scopus)

Abstract

The photo-induced plasma in semiconductor is the fundamental property of the photoelectric phenomenon. The optical illumination of an intrinsic silicon wafer creates inhomogeneous electron-hole plasma in the illuminated area. In this work, an imaging method is proposed to measure the distribution of photo-induced plasma in silicon by a near-field scanning microwave microscopy. The method is implemented by imaging the distributions of photo-induced plasma on high resistance silicon wafer under laser illumination. It is therefore demonstrated to be an effective optoelectronic characteristic method for semiconductor at microwave frequency.

Original languageEnglish
Title of host publication2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages169-172
Number of pages4
ISBN (Electronic)9781728153049
DOIs
Publication statusPublished - Dec 2019
Event2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019 - Xiamen, China
Duration: 17 Dec 201920 Dec 2019

Publication series

Name2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019 - Proceedings

Conference

Conference2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019
Country/TerritoryChina
CityXiamen
Period17/12/1920/12/19

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Ma, L., Leng, N., Ye, X. Z., Jin, M., & Bai, M. (2019). The distribution measurement of the photo-induced plasma in semiconductor by near-field scanning microwave microscopy. In 2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019 - Proceedings (pp. 169-172). Article 9021849 (2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PIERS-Fall48861.2019.9021849