The distorted K1 soft mode of hexagonal-BN sheet and effects of charge doping

Wei Yang; Yu Yang; Fawei Zheng; Ping Zhang

doi:10.1063/1.4827335

The distorted K₁ soft mode of hexagonal-BN sheet and effects of charge doping

Wei Yang, Yu Yang, Fawei Zheng, Ping Zhang^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We demonstrate the distorted K₁ soft mode for the phonon instability of single layer hexagonal-BN sheet under tension, which is different from the well known K₁ mode failure mechanism of graphene. We also investigate the influences of charge doping on the soft mode phonon instability. Meanwhile, the ideal strength is found to be larger for both p- and n-type doped h-BN sheet, reflecting the electronic strengthening effect as similar as graphene. Our results reveal a different soft mode for h-BN sheet from that of graphene and can serve as references for future applications of h-BN sheet.

Original language	English
Article number	183106
Journal	Applied Physics Letters
Volume	103
Issue number	18
DOIs	https://doi.org/10.1063/1.4827335
Publication status	Published - 28 Oct 2013
Externally published	Yes

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Yang, W., Yang, Y., Zheng, F., & Zhang, P. (2013). The distorted K₁ soft mode of hexagonal-BN sheet and effects of charge doping. Applied Physics Letters, 103(18), Article 183106. https://doi.org/10.1063/1.4827335

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abstract = "We demonstrate the distorted K1 soft mode for the phonon instability of single layer hexagonal-BN sheet under tension, which is different from the well known K1 mode failure mechanism of graphene. We also investigate the influences of charge doping on the soft mode phonon instability. Meanwhile, the ideal strength is found to be larger for both p- and n-type doped h-BN sheet, reflecting the electronic strengthening effect as similar as graphene. Our results reveal a different soft mode for h-BN sheet from that of graphene and can serve as references for future applications of h-BN sheet.",

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AB - We demonstrate the distorted K1 soft mode for the phonon instability of single layer hexagonal-BN sheet under tension, which is different from the well known K1 mode failure mechanism of graphene. We also investigate the influences of charge doping on the soft mode phonon instability. Meanwhile, the ideal strength is found to be larger for both p- and n-type doped h-BN sheet, reflecting the electronic strengthening effect as similar as graphene. Our results reveal a different soft mode for h-BN sheet from that of graphene and can serve as references for future applications of h-BN sheet.

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The distorted K₁ soft mode of hexagonal-BN sheet and effects of charge doping

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