Temperature-frequency dependence and mechanism of dielectric properties for γ-Y2Si2O7

Zhi Ling Hou; Mao Sheng Cao; Jie Yuan; Wei Li Song

doi:10.1088/1674-1056/19/1/017702

Temperature-frequency dependence and mechanism of dielectric properties for γ-Y₂Si₂O₇

Zhi Ling Hou, Mao Sheng Cao^*, Jie Yuan, Wei Li Song

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

This paper reports that single-phase γ-Y₂Si ₂O₇ is prepared via a sufficient blending and cold-pressed sintering technique from Y₂O₃ powder and SiO₂ nanopowder. It studies the dielectric properties of γ-Y₂Si ₂O₇ as a function of the temperature and frequency. The γ-Y₂Si₂O₇ exhibits low dielectric loss and non-Debye relaxation behaviour from 25 to 1400 °C in the range of 7.3-18 GHz. The mechanism for polarization relaxation of the as-prepared γ-Y₂Si₂O₇ differing from that of SiO ₂ is explained. Such particular dielectric properties could potentially make specific attraction for extensive practical applications.

Original language	English
Article number	017702
Journal	Chinese Physics B
Volume	19
Issue number	1
DOIs	https://doi.org/10.1088/1674-1056/19/1/017702
Publication status	Published - 2010

Keywords

Dielectric properties
Low dielectric loss
Structural relaxation polarization
γ-YSiO

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Hou, Z. L., Cao, M. S., Yuan, J., & Song, W. L. (2010). Temperature-frequency dependence and mechanism of dielectric properties for γ-Y₂Si₂O₇. Chinese Physics B, 19(1), Article 017702. https://doi.org/10.1088/1674-1056/19/1/017702

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abstract = "This paper reports that single-phase γ-Y2Si 2O7 is prepared via a sufficient blending and cold-pressed sintering technique from Y2O3 powder and SiO2 nanopowder. It studies the dielectric properties of γ-Y2Si 2O7 as a function of the temperature and frequency. The γ-Y2Si2O7 exhibits low dielectric loss and non-Debye relaxation behaviour from 25 to 1400 °C in the range of 7.3-18 GHz. The mechanism for polarization relaxation of the as-prepared γ-Y2Si2O7 differing from that of SiO 2 is explained. Such particular dielectric properties could potentially make specific attraction for extensive practical applications.",

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AB - This paper reports that single-phase γ-Y2Si 2O7 is prepared via a sufficient blending and cold-pressed sintering technique from Y2O3 powder and SiO2 nanopowder. It studies the dielectric properties of γ-Y2Si 2O7 as a function of the temperature and frequency. The γ-Y2Si2O7 exhibits low dielectric loss and non-Debye relaxation behaviour from 25 to 1400 °C in the range of 7.3-18 GHz. The mechanism for polarization relaxation of the as-prepared γ-Y2Si2O7 differing from that of SiO 2 is explained. Such particular dielectric properties could potentially make specific attraction for extensive practical applications.

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KW - Structural relaxation polarization

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JO - Chinese Physics B

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Temperature-frequency dependence and mechanism of dielectric properties for γ-Y₂Si₂O₇

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