TEM and XPS studies on CdS/CIGS interfaces

Jun Feng Han; Cheng Liao; Li Mei Cha; Tao Jiang; Hua Mu Xie; Kui Zhao; Marie Paule Besland

doi:10.1016/j.jpcs.2014.06.002

TEM and XPS studies on CdS/CIGS interfaces

Jun Feng Han^*, Cheng Liao, Li Mei Cha, Tao Jiang, Hua Mu Xie, Kui Zhao, Marie Paule Besland

^*Corresponding author for this work

School of Physics

Research output: Contribution to journal › Article › peer-review

44 Citations (Scopus)

Abstract

Copper indium gallium selenide (CIGS) was deposited by metallic precursors sputtering and subsequently submitted to a selenization process. The upper CdS layers were deposited by chemical bath deposition (CBD) technique. The CdS/CIGS interfaces were investigated by Transmission Electron Microscopy (TEM) and X-ray Photoelectron Spectroscopy (XPS). As checked by XPS analysis, the CIGS surface exhibited a hydroxide-terminated CdSe layer when treated with Cd Partial Electrolyte solution (Cd PE). Its thickness was roughly estimated to several nanometers. A 100 nm thick CdS layer was deposited onto CIGS surface. The TEM images revealed a clear and sharp interface between CdS and CIGS. XPS analysis showed a CIGS surface covered by a pinhole free and homogeneous CdS layer. XPS depth profile measurement of the CdS/CIGS interface did not evidence elemental inter-diffusion between the CIGS and CdS layers, in very good agreement with TEM observations.

Original language	English
Pages (from-to)	1279-1283
Number of pages	5
Journal	Journal of Physics and Chemistry of Solids
Volume	75
Issue number	12
DOIs	https://doi.org/10.1016/j.jpcs.2014.06.002
Publication status	Published - Dec 2014

Keywords

A. Chalcogenides
A. Interfaces
A. Thin films
C. Electron microscopy
C. Photoelectron spectroscopy

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10.1016/j.jpcs.2014.06.002

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Han, J. F., Liao, C., Cha, L. M., Jiang, T., Xie, H. M., Zhao, K., & Besland, M. P. (2014). TEM and XPS studies on CdS/CIGS interfaces. Journal of Physics and Chemistry of Solids, 75(12), 1279-1283. https://doi.org/10.1016/j.jpcs.2014.06.002

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title = "TEM and XPS studies on CdS/CIGS interfaces",

abstract = "Copper indium gallium selenide (CIGS) was deposited by metallic precursors sputtering and subsequently submitted to a selenization process. The upper CdS layers were deposited by chemical bath deposition (CBD) technique. The CdS/CIGS interfaces were investigated by Transmission Electron Microscopy (TEM) and X-ray Photoelectron Spectroscopy (XPS). As checked by XPS analysis, the CIGS surface exhibited a hydroxide-terminated CdSe layer when treated with Cd Partial Electrolyte solution (Cd PE). Its thickness was roughly estimated to several nanometers. A 100 nm thick CdS layer was deposited onto CIGS surface. The TEM images revealed a clear and sharp interface between CdS and CIGS. XPS analysis showed a CIGS surface covered by a pinhole free and homogeneous CdS layer. XPS depth profile measurement of the CdS/CIGS interface did not evidence elemental inter-diffusion between the CIGS and CdS layers, in very good agreement with TEM observations.",

keywords = "A. Chalcogenides, A. Interfaces, A. Thin films, C. Electron microscopy, C. Photoelectron spectroscopy",

author = "Han, {Jun Feng} and Cheng Liao and Cha, {Li Mei} and Tao Jiang and Xie, {Hua Mu} and Kui Zhao and Besland, {Marie Paule}",

year = "2014",

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T1 - TEM and XPS studies on CdS/CIGS interfaces

AU - Han, Jun Feng

AU - Liao, Cheng

AU - Cha, Li Mei

AU - Jiang, Tao

AU - Xie, Hua Mu

AU - Zhao, Kui

AU - Besland, Marie Paule

PY - 2014/12

Y1 - 2014/12

N2 - Copper indium gallium selenide (CIGS) was deposited by metallic precursors sputtering and subsequently submitted to a selenization process. The upper CdS layers were deposited by chemical bath deposition (CBD) technique. The CdS/CIGS interfaces were investigated by Transmission Electron Microscopy (TEM) and X-ray Photoelectron Spectroscopy (XPS). As checked by XPS analysis, the CIGS surface exhibited a hydroxide-terminated CdSe layer when treated with Cd Partial Electrolyte solution (Cd PE). Its thickness was roughly estimated to several nanometers. A 100 nm thick CdS layer was deposited onto CIGS surface. The TEM images revealed a clear and sharp interface between CdS and CIGS. XPS analysis showed a CIGS surface covered by a pinhole free and homogeneous CdS layer. XPS depth profile measurement of the CdS/CIGS interface did not evidence elemental inter-diffusion between the CIGS and CdS layers, in very good agreement with TEM observations.

AB - Copper indium gallium selenide (CIGS) was deposited by metallic precursors sputtering and subsequently submitted to a selenization process. The upper CdS layers were deposited by chemical bath deposition (CBD) technique. The CdS/CIGS interfaces were investigated by Transmission Electron Microscopy (TEM) and X-ray Photoelectron Spectroscopy (XPS). As checked by XPS analysis, the CIGS surface exhibited a hydroxide-terminated CdSe layer when treated with Cd Partial Electrolyte solution (Cd PE). Its thickness was roughly estimated to several nanometers. A 100 nm thick CdS layer was deposited onto CIGS surface. The TEM images revealed a clear and sharp interface between CdS and CIGS. XPS analysis showed a CIGS surface covered by a pinhole free and homogeneous CdS layer. XPS depth profile measurement of the CdS/CIGS interface did not evidence elemental inter-diffusion between the CIGS and CdS layers, in very good agreement with TEM observations.

KW - A. Chalcogenides

KW - A. Interfaces

KW - A. Thin films

KW - C. Electron microscopy

KW - C. Photoelectron spectroscopy

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SN - 0022-3697

VL - 75

SP - 1279

EP - 1283

JO - Journal of Physics and Chemistry of Solids

JF - Journal of Physics and Chemistry of Solids

IS - 12

ER -

TEM and XPS studies on CdS/CIGS interfaces

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