Abstract
Copper indium gallium selenide (CIGS) was deposited by metallic precursors sputtering and subsequently submitted to a selenization process. The upper CdS layers were deposited by chemical bath deposition (CBD) technique. The CdS/CIGS interfaces were investigated by Transmission Electron Microscopy (TEM) and X-ray Photoelectron Spectroscopy (XPS). As checked by XPS analysis, the CIGS surface exhibited a hydroxide-terminated CdSe layer when treated with Cd Partial Electrolyte solution (Cd PE). Its thickness was roughly estimated to several nanometers. A 100 nm thick CdS layer was deposited onto CIGS surface. The TEM images revealed a clear and sharp interface between CdS and CIGS. XPS analysis showed a CIGS surface covered by a pinhole free and homogeneous CdS layer. XPS depth profile measurement of the CdS/CIGS interface did not evidence elemental inter-diffusion between the CIGS and CdS layers, in very good agreement with TEM observations.
Original language | English |
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Pages (from-to) | 1279-1283 |
Number of pages | 5 |
Journal | Journal of Physics and Chemistry of Solids |
Volume | 75 |
Issue number | 12 |
DOIs | |
Publication status | Published - Dec 2014 |
Keywords
- A. Chalcogenides
- A. Interfaces
- A. Thin films
- C. Electron microscopy
- C. Photoelectron spectroscopy