Te-Vacancy-Induced Surface Collapse and Reconstruction in Antiferromagnetic Topological Insulator MnBi2Te4

Fuchen Hou, Qiushi Yao, Chun Sheng Zhou, Xiao Ming Ma, Mengjiao Han, Yu Jie Hao, Xuefeng Wu, Yu Zhang, Hongyi Sun, Chang Liu, Yue Zhao*, Qihang Liu*, Junhao Lin*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

57 Citations (Scopus)

Abstract

MnBi2Te4 is an antiferromagnetic topological insulator that has stimulated intense interest due to its exotic quantum phenomena and promising device applications. The surface structure is a determinant factor to understand the magnetic and topological behavior of MnBi2Te4, yet its precise atomic structure remains elusive. Here we discovered a surface collapse and reconstruction of few-layer MnBi2Te4 exfoliated under delicate protection. Instead of the ideal septuple-layer structure in the bulk, the collapsed surface is shown to reconstruct as a Mn-doped Bi2Te3 quintuple layer and a MnxBiyTe double layer with a clear van der Waals gap in between. Combined with first-principles calculations, such surface collapse is attributed to the abundant intrinsic Mn-Bi antisite defects and the tellurium vacancy in the exfoliated surface, which is further supported by in situ annealing and electron irradiation experiments. Our results shed light on the understanding of the intricate surface-bulk correspondence of MnBi2Te4 and provide an insightful perspective on the surface-related quantum measurements in MnBi2Te4 few-layer devices.

Original languageEnglish
Pages (from-to)11262-11272
Number of pages11
JournalACS Nano
Volume14
Issue number9
DOIs
Publication statusPublished - 22 Sept 2020
Externally publishedYes

Keywords

  • antisite defects
  • in situ surface dynamics
  • magnetic topological insulator
  • MnBiTe
  • surface reconstruction
  • tellurium vacancy

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