SU-8 enhanced high power density MEMS inductors

Mingliang Wang; Khai D.T. Ngo; Huikai Xie

doi:10.1109/IECON.2008.4758379

SU-8 enhanced high power density MEMS inductors

Mingliang Wang^*, Khai D.T. Ngo, Huikai Xie

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

10 Citations (Scopus)

Abstract

Monolithic integration of DC-DC converters with onchip inductors has emerged as a viable means to reduce size and increase transient performance for portable electronics applications. High-power-density inductors have been recognized as a barrier for such integration. In this paper, a CMOS-compatible process that is capable of fabricating on-chip inductors with low DC resistance and high power density is developed. A unique silicon molding technique is used to obtain thick electroplating layers for cores and windings. SU-8 is used as the isolation material between windings and cores. A pot-core inductor with a low-frequency inductance of 134 nH and a dc resistance of 9.1 mΩ has been demonstrated.

Original language	English
Title of host publication	Proceedings - 34th Annual Conference of the IEEE Industrial Electronics Society, IECON 2008
Publisher	IEEE Computer Society
Pages	2672-2676
Number of pages	5
ISBN (Print)	9781424417667
DOIs	https://doi.org/10.1109/IECON.2008.4758379
Publication status	Published - 2008
Externally published	Yes

Publication series

Name	IECON Proceedings (Industrial Electronics Conference)

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10.1109/IECON.2008.4758379

Cite this

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title = "SU-8 enhanced high power density MEMS inductors",

abstract = "Monolithic integration of DC-DC converters with onchip inductors has emerged as a viable means to reduce size and increase transient performance for portable electronics applications. High-power-density inductors have been recognized as a barrier for such integration. In this paper, a CMOS-compatible process that is capable of fabricating on-chip inductors with low DC resistance and high power density is developed. A unique silicon molding technique is used to obtain thick electroplating layers for cores and windings. SU-8 is used as the isolation material between windings and cores. A pot-core inductor with a low-frequency inductance of 134 nH and a dc resistance of 9.1 mΩ has been demonstrated.",

author = "Mingliang Wang and Ngo, {Khai D.T.} and Huikai Xie",

year = "2008",

doi = "10.1109/IECON.2008.4758379",

language = "English",

isbn = "9781424417667",

series = "IECON Proceedings (Industrial Electronics Conference)",

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pages = "2672--2676",

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address = "United States",

}

SU-8 enhanced high power density MEMS inductors. / Wang, Mingliang; Ngo, Khai D.T.; Xie, Huikai.
Proceedings - 34th Annual Conference of the IEEE Industrial Electronics Society, IECON 2008. IEEE Computer Society, 2008. p. 2672-2676 4758379 (IECON Proceedings (Industrial Electronics Conference)).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Ngo, Khai D.T.

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AB - Monolithic integration of DC-DC converters with onchip inductors has emerged as a viable means to reduce size and increase transient performance for portable electronics applications. High-power-density inductors have been recognized as a barrier for such integration. In this paper, a CMOS-compatible process that is capable of fabricating on-chip inductors with low DC resistance and high power density is developed. A unique silicon molding technique is used to obtain thick electroplating layers for cores and windings. SU-8 is used as the isolation material between windings and cores. A pot-core inductor with a low-frequency inductance of 134 nH and a dc resistance of 9.1 mΩ has been demonstrated.

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BT - Proceedings - 34th Annual Conference of the IEEE Industrial Electronics Society, IECON 2008

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SU-8 enhanced high power density MEMS inductors

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