TY - GEN
T1 - Study on the effectiveness of protective methods for AlN film during SAW resonator fabrication
AU - Zhou, Yixin
AU - Chang, Yi
AU - Wang, Xuetian
AU - Gao, Hongmin
N1 - Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - AlN is a new kind of piezoelectric material with promising application prospects in harsh working environment. Though its outstanding thermal and mechanical stability has been proven, AlN is sensitive to alkaline substances including most of the developer solution in common use, so extra methods are required to protect the material from corrosion in photolithography process afterwards. We have succeeded in examining the effectiveness of SiO2 protective layer to achieve a rigid 'sandwich' structure of an AlN-based SAW resonator. Evident from the results showed an overall modification with subsequent upper structure manufacturing because the adopted protective layer has guaranteed good quality of the AlN substrate. This work reported a simple methodology to enable a MEMS-compatible fabrication process of SAW resonator, which makes further improvement on the characterization of AlN devices possible.
AB - AlN is a new kind of piezoelectric material with promising application prospects in harsh working environment. Though its outstanding thermal and mechanical stability has been proven, AlN is sensitive to alkaline substances including most of the developer solution in common use, so extra methods are required to protect the material from corrosion in photolithography process afterwards. We have succeeded in examining the effectiveness of SiO2 protective layer to achieve a rigid 'sandwich' structure of an AlN-based SAW resonator. Evident from the results showed an overall modification with subsequent upper structure manufacturing because the adopted protective layer has guaranteed good quality of the AlN substrate. This work reported a simple methodology to enable a MEMS-compatible fabrication process of SAW resonator, which makes further improvement on the characterization of AlN devices possible.
UR - http://www.scopus.com/inward/record.url?scp=85148640822&partnerID=8YFLogxK
U2 - 10.1109/ICMMT55580.2022.10022881
DO - 10.1109/ICMMT55580.2022.10022881
M3 - Conference contribution
AN - SCOPUS:85148640822
T3 - 2022 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2022 - Proceedings
BT - 2022 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2022 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 14th International Conference on Microwave and Millimeter Wave Technology, ICMMT 2022
Y2 - 12 August 2022 through 15 August 2022
ER -